BC550C , 0.625W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 420ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)ACharacteristic Symbol Min ..
BC550CTA ,NPN Epitaxial Silicon TransistorApplications• High Voltage: BC546, V =65VCEO• Low Noise: BC549, BC550• Complement to BC556 ... BC56 ..
BC556 ,PNP SILICON PLANAR EPITAXIAL TRANSISTORSElectrical Characteristics (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
BC556A ,PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC556A ,PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC556A ,PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BF1205 ,Dual N-channel dual gate MOS-FETapplications with 5 V supply voltage, such as digital andanalog television tuners and professionalc ..
BF1205 ,Dual N-channel dual gate MOS-FETLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BF1206 ,Dual N-channel dual-gate MOS-FETLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BF1206F , Dual N-channel dual gate MOSFET
BF1207 ,Dual N-channel dual-gate MOSFETapplications with 5 V supply voltage, such as digital and analog television tuners and professional ..
BF1208 ,Dual N-channel dual-gate MOSFETGeneral descriptionThe BF1208 is a combination of two dual gate MOSFET amplifiers with shared sourc ..
BC550C
0.625W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.100A Ic, 420
Low Noise T ransistors
NPN Silicon
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
OFF CHARACTERISTICSCOLLECTOR
BASE
EMITTER
