BC548A ,Si-Epitaxial PlanarTransistors
BC548A ,Si-Epitaxial PlanarTransistors
BC548A ,Si-Epitaxial PlanarTransistorsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Ambient R 200 ..
BC548-A ,Si-Epitaxial PlanarTransistors
BC548B ,Si-Epitaxial PlanarTransistorsRev. 1.2, 02-Nov-04 3BC546 / 547 / 548VISHAYVishay SemiconductorsTypical Characteristics (Tamb = 25 ..
BC548C ,Si-Epitaxial PlanarTransistors
BF1102 ,N-channel dual-gate MOSFETLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BF1102R ,N-channel dual-gate MOSFETapplications1 gate 1 (1) gate 1 (1) Superior cross-modulation performance during AGC2 gate 2 (1 an ..
BF1105 ,N-channel dual-gate MOSFET
BF1105R ,N-channel dual-gate MOSFETFEATURES PINNING Short channel transistor with high PIN DESCRIPTIONhandbook, 2 columns 3 4forward ..
BF1105WR ,N-channel dual-gate MOSFET
BF1105WR ,N-channel dual-gate MOSFETapplications with 5 V supply voltage, such as television tuners and professional communications equ ..
BC548-BC548A
0.500W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 110
-
NPN Silicon
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
OFF CHARACTERISTICS
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