BC547B ,Si-Epitaxial PlanarTransistorsBC547BBC547C®SMALL SIGNAL NPN TRANSISTORSType MarkingBC547B BC547BBC547C BC547C■ SILICON EPITAXIAL ..
BC547BTAR ,NPN Epitaxial Silicon TransistorApplications• High Voltage: BC546, V =65VCEO• Low Noise: BC549, BC550• Complement to BC556 ... BC56 ..
BC547BTF ,NPN Epitaxial Silicon TransistorBC546/547/548/549/550BC546/547/548/549/550Switching and
BC547BTF ,NPN Epitaxial Silicon TransistorApplications• High Voltage: BC546, V =65VCEO• Low Noise: BC549, BC550• Complement to BC556 ... BC56 ..
BC547C ,Si-Epitaxial PlanarTransistorspin configuration TO-18.Mechanical DataCase: TO-92 Plastic caseWeight: approx. 177 mgPackaging Code ..
BC547CTA ,NPN Epitaxial Silicon TransistorApplications• High Voltage: BC546, V =65VCEO• Low Noise: BC549, BC550• Complement to BC556 ... BC56 ..
BF1009 ,Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network
BF1009S ,Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)BF1009S...Silicon N_Channel MOSFET Tetrode• For low noise, high gain controlled input stage up to ..
BF1012 , Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
BF1012 , Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
BF1012S ,Silicon N-Channel MOSFET TetrodeBF1012SSilicon N-Channel MOSFET Tetrode3
BC547B
Si-Epitaxial PlanarTransistors
BC547B
BC547CSMALL SIGNAL NPN TRANSISTORS SILICON EPITAXIAL PLANAR NPN
TRANSISTORS TO-92 PACKAGE SUITABLE FOR
THROUGH-HOLE PCB ASSEMBLY BC547B - THE PNP COMPLEMENTARY
TYPE IS BC557B
APPLICATIONS WELL SUITABLE FOR TV AND HOME
APPLIANCE EQUIPMENT SMALL LOAD SWITCH TRANSISTORS
WITH HIGH GAIN AND LOW SATURATION
VOLTAGE
January 2003
ABSOLUTE MAXIMUM RATINGS1/4
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle ≤ 2 %
BC547B / BC547C2/4
BC547B / BC547C3/4
. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2002 STMicroelectronics – Printed in Italy – All Rights Reserved
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BC547B / BC547C4/4
:
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