BC546B , 0.500W General Purpose NPN Plastic Leaded Transistor. 65V Vceo, 0.100A Ic, 200Applications• High Voltage: BC546, V =65VCEO• Low Noise: BC549, BC550• Complement to BC556 ... BC56 ..
BC546B , 0.500W General Purpose NPN Plastic Leaded Transistor. 65V Vceo, 0.100A Ic, 200
BC546B , 0.500W General Purpose NPN Plastic Leaded Transistor. 65V Vceo, 0.100A Ic, 200
BC546B , 0.500W General Purpose NPN Plastic Leaded Transistor. 65V Vceo, 0.100A Ic, 200
BC546BRL1 ,Transistor NPN Silicon Plastic
BC546C , NPN Silicon Amplifier Transistor 625mW
BF1005R ,RF-MOSFETBF1005...Silicon N-Channel MOSFET Tetrode• For low noise, high gain controlled input stages up to ..
BF1005S ,RF-MOSFETBF1005S...Silicon N-Channel MOSFET Tetrode• For low noise, high gain controlled input stages up t ..
BF1005SR ,RF-MOSFETCharacteristicsParameter Symbol Values Unitmin. typ. max.DC
BF1005SR ,RF-MOSFETCharacteristics12 - - VDrain-source breakdown voltage V(BR)DSI = 650 µA, V = 0 , V = 0 D G1S G2S8 - ..
BF1009 ,Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network
BF1009 ,Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network
BC546B-BC546BRL1-BC548C
Transistor NPN Silicon Plastic