BC550B , 0.625W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 200
BC550B , 0.625W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 200Applications• High Voltage: BC546, V =65VCEO• Low Noise: BC549, BC550• Complement to BC556 ... BC56 ..
BC550B , 0.625W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 200BC546/547/548/549/550BC546/547/548/549/550Switching and
BC550C , 0.625W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 420ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)ACharacteristic Symbol Min ..
BC550CTA ,NPN Epitaxial Silicon TransistorApplications• High Voltage: BC546, V =65VCEO• Low Noise: BC549, BC550• Complement to BC556 ... BC56 ..
BC556 ,PNP SILICON PLANAR EPITAXIAL TRANSISTORSElectrical Characteristics (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
BF1204 ,Dual N-channel dual gate MOS-FETLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BF1204 ,Dual N-channel dual gate MOS-FET
BF1205 ,Dual N-channel dual gate MOS-FETapplications with 5 V supply voltage, such as digital andanalog television tuners and professionalc ..
BF1205 ,Dual N-channel dual gate MOS-FETLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BF1206 ,Dual N-channel dual-gate MOS-FETLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BF1206F , Dual N-channel dual gate MOSFET
BC546A-BC546B-BC547BTAR-BC547BTF-BC547CTA-BC549B-BC549C-BC549CTA-BC550B-BC550CTA
NPN Epitaxial Silicon Transistor
BC546/547/548/549/550 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, V =65V CEO • Low Noise: BC549, BC550 • Complement to BC556 ... BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage : BC546 80 V CBO : BC547/550 50 V : BC548/549 30 V V Collector-Emitter Voltage : BC546 65 V CEO : BC547/550 45 V : BC548/549 30 V V Emitter-Base Voltage : BC546/547 6 V EBO : BC548/549/550 5 V I Collector Current (DC) 100 mA C P Collector Power Dissipation 500 mW C T Junction Temperature 150 °C J T Storage Temperature -65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V =30V, I =0 15 nA CBO CB E h DC Current Gain V =5V, I =2mA 110 800 FE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =0.5mA 90 250 mV CE C B I =100mA, I =5mA 200 600 mV C B V (sat) Base-Emitter Saturation Voltage I =10mA, I =0.5mA 700 mV BE C B I =100mA, I =5mA 900 mV C B V (on) Base-Emitter On Voltage V =5V, I =2mA 580 660 700 mV BE CE C V =5V, I =10mA 720 mV CE C f Current Gain Bandwidth Product V =5V, I =10mA, f=100MHz 300 MHz T CE C C Output Capacitance V =10V, I =0, f=1MHz 3.5 6 pF ob CB E C Input Capacitance V =0.5V, I =0, f=1MHz 9 pF ib EB C NF Noise Figure : BC546/547/548 V =5V, I =200μA 2 10 dB CE C : BC549/550 f=1KHz, R =2KΩ 1.2 4 dB G : BC549 V =5V, I =200μA 1.4 4 dB CE C : BC550 R =2KΩ, f=30~15000MHz 1.4 3 dB G h Classification FE Classification A B C h 110 ~ 220 200 ~ 450 420 ~ 800 FE ©2002 Rev. A2, August 2002
