BC517 ,NPN Darlington TransistorBC517 NPN Darlington TransistorJanuary 2005BC517NPN Darlington Transistor• This device is designed ..
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BC517
NPN Darlington Transistor
BC517 NPN Darlington Transistor January 2005 BC517 NPN Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from process 05. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings * T = 25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage 30 V CEO V Collector-Base Voltage 40 V CBO V Emitter-Base Voltage 10 V EBO I Collector Current - Continuous 1.2 A C T , T Operating and Storage Junction Temperature Range -55 ~ 150 °C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T = 25°C unless otherwise noted a Symbol Parameter Conditions Min. Max Units Off Characteristics V Collector-Emitter Breakdown Voltage * I = 2.0mA, I = 0 30 V (BR)CEO C B V Collector-Base Breakdown Voltage I = 10μA, I = 0 40 V (BR)CBO C E V Emitter-Base Breakdown Voltage I = 100nA, I = 0 10 V (BR)EBO E C I Collector Cut-off Current V = 30V, I = 0 100 nA CBO CB E On Characteristics * h DC Current Gain V = 2.0V, I = 20mA 30,000 FE CE C V Collector-Emitter Saturation Voltage I = 100mA, I = 0.1mA 1 V CE(sat) C B V Base-Emitter On Voltage I = 10mA, V = 5.0V 1.4 V BE(on) C CE Thermal Characteristics T = 25°C unless otherwise noted a Symbol Parameter Value Units P Total Device Dissipation 625 mW D Derate above 25°C 5.0 mW/°C R Thermal Resistance, Junction to Case 83.3 °C/W θJC R Thermal Resistance, Junction to Ambient 200 °C/W θJA ©2005 1 BC517 Rev. A
