BC338-40 , 0.625W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.800A Ic, 250ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
BC368 ,Amplifier TransistorsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Ambient R 200 ..
BC368ZL1G , Voltage and Current are Negative
BC369 , 0.800W General Purpose PNP Plastic Leaded Transistor. 20V Vceo, 1.000A Ic, 50MAXIMUM RATINGSRating Symbol Value UnitCollector–Emitter Voltage V 20 VdcCEOCollector–Emitter Volta ..
BC369ZL1 ,Small Signal Plastic TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
BC372 ,High Voltage Darlington TransistorsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
BDX33C ,NPN Epitaxial Silicon TransistorELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
BDX33CG , Darlington Complementary Silicon Power Transistors
BDX34A ,PNP Epitaxial Silicon TransistorBDX34/A/B/CBDX34/A/B/CPower Linear and Switching
BDX34A ,PNP Epitaxial Silicon TransistorApplications High Gain General Purpose Power Darlington TR Complement to BDX33/33A/33B/33C resp ..
BDX34B ,PNP Epitaxial Silicon TransistorON SemiconductorNPNDarlington ComplementaryBDX33BSilicon Power Transistors*BDX33C...designed for g ..
BDX34B. ,PNP Epitaxial Silicon TransistorBDX33B BDX33CBDX34B BDX34C®COMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORSDESCRIPTION ..
BC338-40
Si-Epitaxial PlanarTransistors
NPN Silicon
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
OFF CHARACTERISTICSCOLLECTOR
BASE
EMITTER
