BC327-40 ,PNP EPITAXIAL SILICON TRANSISTORApplications• Suitable for AF-Driver stages and low power output stages• Complement to BC337/BC338T ..
BC327RL1 ,Transistor Silicon Plastic PNPELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)ACharacteristic Symbol Min ..
BC328 ,Si-Epitaxial PlanarTransistorsElectrical Characteristics (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
BC328-16 ,Si-Epitaxial PlanarTransistors
BC328-16 ,Si-Epitaxial PlanarTransistors
BC328-16 ,Si-Epitaxial PlanarTransistors
BDT30CF , isc Silicon PNP Power Transistors
BDT30CF , isc Silicon PNP Power Transistors
BDT32C , isc Silicon PNP Power Transistors
BDT42C , isc Silicon PNP Power Transistors
BDT61C , isc Silicon NPN Darlington Power Transistors
BDT62C , isc Silicon PNP Darlington Power Transistors
BC327-40
PNP EPITAXIAL SILICON TRANSISTOR
BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage CES : BC327 -50 V : BC328 -30 V V Collector-Emitter Voltage CEO : BC327 -45 V : BC328 -25 V V Emitter-Base Voltage -5 V EBO I Collector Current (DC) -800 mA C P Collector Power Dissipation 625 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Emitter Breakdown Voltage I = -10mA, I =0 CEO C B : BC327 -45 V : BC328 -25 V BV Collector-Emitter Breakdown Voltage I = -0.1mA, V =0 CES C BE : BC327 -50 V : BC328 -30 V BV Emitter-Base Breakdown Voltage I = -10μA, I =0 -5 V EBO E C I Collector Cut-off Current CES : BC327 V = -45V, V =0 -2 -100 nA CE BE : BC328 V = -25V, V =0 -2 -100 nA CE BE h DC Current Gain V = -1V, I = -100mA 100 630 FE1 CE C h V = -1V, I = -300mA 40 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = -500mA, I = -50mA -0.7 V CE C B V (on) Base-Emitter On Voltage V = -1V, I = -300mA -1.2 V BE CE C f Current Gain Bandwidth Product V = -5V, I = -10mA, f=20MHz 100 MHz T CE C C Output Capacitance V = -10V, I =0, f=1MHz 12 pF ob CB E h Classification FE Classification 16 25 40 h 100 ~ 250 160 ~ 400 250 ~ 630 FE1 h 60- 100- 170- FE2 ©2002 Rev. B1, August 2002
