BC307C , 1.000W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 420ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
BC308A , 1.000W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120Applications• Low Noise: BC309TO-9211. Collector 2. Base 3. EmitterPNP Epitaxial Silicon Transi ..
BC308A , 1.000W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120BC307/308/309BC307/308/309Switching and Amplifier
BC308A , 1.000W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120Applications• Low Noise: BC309TO-9211. Collector 2. Base 3. EmitterPNP Epitaxial Silicon Transi ..
BC308B ,PNP EPITAXIAL SILICON TRANSISTORBC307/308/309BC307/308/309Switching and Amplifier
BC309 ,Switching and Amplifier ApplicationsBC307/308/309BC307/308/309Switching and Amplifier
BDP1A16G , Quad Differential Drivers BDG1A, BDP1A, BDGLA, BPNGA, BPNPA, and BPPGA
BDP1A16G , Quad Differential Drivers BDG1A, BDP1A, BDGLA, BPNGA, BPNPA, and BPPGA
BDP32 ,PNP medium power transistor
BDP32 ,PNP medium power transistor
BDP32 ,PNP medium power transistor
BDP948 ,PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)CharacteristicsCollector-emitter breakdown voltage V V (BR)CEOI = 10 mA, I = 0 45 - -BDP948C B60 ..
BC307C
Transistor Silicon PNP
BC307B, BC307C
Amplifier T ransistors
PNP Silicon
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
