BC308A , 1.000W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120Applications• Low Noise: BC309TO-9211. Collector 2. Base 3. EmitterPNP Epitaxial Silicon Transi ..
BC308A , 1.000W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120BC307/308/309BC307/308/309Switching and Amplifier
BC308A , 1.000W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120Applications• Low Noise: BC309TO-9211. Collector 2. Base 3. EmitterPNP Epitaxial Silicon Transi ..
BC308B ,PNP EPITAXIAL SILICON TRANSISTORBC307/308/309BC307/308/309Switching and Amplifier
BC309 ,Switching and Amplifier ApplicationsBC307/308/309BC307/308/309Switching and Amplifier
BC318 , NPN SILICON PLANAR EPITAXIAL TRANSISTORS
BDP1A16G , Quad Differential Drivers BDG1A, BDP1A, BDGLA, BPNGA, BPNPA, and BPPGA
BDP1A16G , Quad Differential Drivers BDG1A, BDP1A, BDGLA, BPNGA, BPNPA, and BPPGA
BDP32 ,PNP medium power transistor
BDP32 ,PNP medium power transistor
BDP32 ,PNP medium power transistor
BDP948 ,PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)CharacteristicsCollector-emitter breakdown voltage V V (BR)CEOI = 10 mA, I = 0 45 - -BDP948C B60 ..
BC307B-BC308A
PNP Epitaxial Silicon Transistor
BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage CES : BC307 -50 V : BC308/309 -30 V V Collector-Emitter Voltage CEO : BC307 -45 V : BC308/309 -25 V V Emitter-Base Voltage -5 V EBO I Collector Current (DC) -100 mA C P Collector Power Dissipation 500 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG ©2002 Rev. A2, August 2002
