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BC214LB
PNP General Purpose Amplifier
BC214LB BC214LB PNP General Purpose Amplifier This device is deisgned for use as general purpose amplifiers and switches requiring collector currents to 300mA. Sourced from process 68. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage -30 V CEO V Collector-Base Voltage -45 V CBO V Emitter-Base Voltage -5.0 V EBO I Collector Current (DC)- - Continuous -500 mA C T , T Operating and Storage Junction Temperature Range - 55 ~ 150 °C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Collector-Emitter Voltage I = -2mA, I = 0 -30 V (BR)CEO C B V Collector-Base Voltage I = -10μA, I = 0 -45 V (BR)CBO C E V Emitter-Base Voltage I = -10μA, I = 0 -5.0 V (BR)EBO E C I Collector Cut-off Current V = -30V, I = 0 -15 nA CBO CB E I Emitter Cut-off Current V = -4V, I = 0 -15 nA EBO EB C On Characteristics * h DC Current Gain V = -5V, I = -2mA 140 400 FE CE C V (sat) Collector-Emitter Saturation Voltage I = -10mA, I = -0.5mA -0.25 V CE C B I = -100mA, I = -5mA -0.6 C B V (sat) Base-Emitter Saturation Voltage I = -100mA, I = -5mA -1.1 V BE C B V (on) Base-Emitter On Voltage V = -5V, I = -2mA -0.6 -0.72 V BE CE C Small Signal Characteristics f Current gain Bandwidth Product V = -5V, I = -10mA 200 MHz T CE C f = 100MHz NF Noise Figure V = -5V, I = -200μA 2.0 dB CE C R = 2kΩ, f = 15.7KHz G h Small Signal Current Gain I = -2mA, V = -5V 200 400 fe C CE f = 1KHz C Output Capacitance V = -10V, f = 1MHz 10 pF OB CB * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% ©2003 Rev. A, October 2003
