BC214 ,PNP General Purpose AmplifierBC214BC214PNP General Purpose Amplifier• This device is deisgned for use as general purpose amplifi ..
BC214L ,PNP General Purpose Amplifierapplications involving pulsed or low duty cycle operations
BC214L ,PNP General Purpose AmplifierBC214LBC214LPNP General Purpose Amplifier This device is deisgned for use as general purpose ampli ..
BC214L ,PNP General Purpose AmplifierBC214LBC214LPNP General Purpose Amplifier This device is deisgned for use as general purpose ampli ..
BC214LB ,PNP General Purpose AmplifierBC214LBBC214LBPNP General Purpose Amplifier This device is deisgned for use as general purpose amp ..
BC214LC ,PNP General Purpose AmplifierBC214LCBC214LCPNP General Purpose Amplifier This device is deisgned for use as general purpose amp ..
BD-C514RE , DUAL DIGIT LED DISPLAYS
BD-C535RD , DUAL DIGIT LED DISPLAYS
BD-C542RD , green chips, which are made from GaP on GaP substrate
BD-C542RD , green chips, which are made from GaP on GaP substrate
BD-E302RD , green chips, which are made from GaP on GaP substrate
BD-E302RD , green chips, which are made from GaP on GaP substrate
BC214
PNP General Purpose Amplifier
BC214 BC214 PNP General Purpose Amplifier • This device is deisgned for use as general purpose amplifiers and switches requiring collector currents to 300mA. • Sourced from process 68. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage -30 V CEO V Collector-Base Voltage -45 V CBO V Emitter-Base Voltage -5.0 V EBO I Collector Current (DC)- - Continuous -500 mA C T , T Operating and Storage Junction Temperature Range - 55 ~ 150 °C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Collector-Emitter Voltage I = -2mA, I = 0 -30 V (BR)CEO C B V Collector-Base Voltage I = -10μA, I = 0 -45 V (BR)CBO C E V Emitter-Base Voltage I = -10μA, I = 0 -5.0 V (BR)EBO E C I Collector Cut-off Current V = -30V, I = 0 -15 nA CBO CB E I Emitter Cut-off Current V = -4V, I = 0 -15 nA EBO EB C On Characteristics * h DC Current Gain V = -5V, I = -10μA 100 FE CE C V = -5V, I = -2mA 140 400 CE C V = -5V, I = -100mA 120 CE C V (sat) Collector-Emitter Saturation Voltage I = -10mA, I = -0.5mA -0.25 V CE C B I = -100mA, I = -5mA -0.6 C B V (sat) Base-Emitter Saturation Voltage I = -100mA, I = -5mA -1.1 V BE C B V (on) Base-Emitter On Voltage V = -5V, I = -2mA -0.6 -0.72 V BE CE C Small Signal Characteristics f Current gain Bandwidth Product V = -5V, I = -10mA 200 MHz T CE C f = 100MHz NF Noise Figure V = -5V, I = -200μA 2.0 dB CE C R = 2kΩ, f = 15.7KHz G h Small Signal Current Gain I = -2mA, V = -5V 140 600 fe C CE f = 1KHz C Output Capacitance V = -10V, f = 1MHz 10 pF OB CB * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% ©2004 Rev. A, July 2004
