IC Phoenix
 
Home ›  BB9 > BC213L,PNP General Purpose Amplifier
BC213L Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
BC213LN/a400avaiPNP General Purpose Amplifier
BC213LFSCN/a5465avaiPNP General Purpose Amplifier
BC213LPhilipsN/a5000avaiPNP General Purpose Amplifier


BC213L ,PNP General Purpose AmplifierBC213LBC213LPNP General Purpose Amplifier• This device is deisgned for use as general purpose ampli ..
BC213L ,PNP General Purpose Amplifierapplications involving pulsed or low duty cycle operations
BC213L ,PNP General Purpose AmplifierBC213LBC213LPNP General Purpose Amplifier• This device is deisgned for use as general purpose ampli ..
BC214 ,PNP General Purpose AmplifierBC214BC214PNP General Purpose Amplifier• This device is deisgned for use as general purpose amplifi ..
BC214L ,PNP General Purpose Amplifierapplications involving pulsed or low duty cycle operations
BC214L ,PNP General Purpose AmplifierBC214LBC214LPNP General Purpose Amplifier This device is deisgned for use as general purpose ampli ..
BD-C404NE , DUAL DIGIT LED DISPLAYS
BD-C404NE , DUAL DIGIT LED DISPLAYS
BD-C505RE , DUAL DIGIT LED DISPLAYS
BD-C512RD , green chips, which are made from GaP on GaP substrate
BD-C514RE , DUAL DIGIT LED DISPLAYS
BD-C535RD , DUAL DIGIT LED DISPLAYS


BC213L
PNP General Purpose Amplifier
BC213L BC213L PNP General Purpose Amplifier • This device is deisgned for use as general purpose amplifiers and switches requiring collector currents to 300mA. • Sourced from process 68. • See PN200 for Characteristics. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings* T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Emitter Voltage -30 V CEO V Collector-Base Voltage -45 V CBO V Emitter-Base Voltage -5.0 V EBO I Collector Current (DC)- - Continuous -500 mA C T , T Operating and Storage Junction Temperature Range - 55 ~ 150 °C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Collector-Emitter Voltage I = -2mA, I = 0 -30 V (BR)CEO C B V Collector-Base Voltage I = -10μA, I = 0 -45 V (BR)CBO C E V Emitter-Base Voltage I = -10μA, I = 0 -5.0 V (BR)EBO E C I Collector Cut-off Current V = -30V, I = 0 -15 nA CBO CB E I Emitter Cut-off Current V = -4.0V, I = 0 -15 nA EBO EB C On Characteristics * h DC Current Gain V = -5V, I = -10μA 40 FE CE C V = -5V, I = -2.0mA 80 400 CE C V (sat) Collector-Emitter Saturation Voltage I = -10mA, I = -0.5mA -0.25 V CE C B I = -100mA, I = -5.0mA -0.6 C B V (sat) Base-Emitter Saturation Voltage I = -100mA, I = -5.0mA -1.1 V BE C B V (on) Base-Emitter On Voltage V = -5.0V, I = -2.0mA -0.6 -0.72 V BE CE C Small Signal Characteristics f Current gain Bandwidth Product V = -5.0V, I = -10mA 200 MHz T CE C f = 100MHz NF Noise Figure V = -5.0V, I = -200μA 10 dB CE C R = 2.0kΩ, f = 1.0KHz G h Small Signal Current Gain I = -2.0mA, V = -5.0V 80 fe C CE f = 1.0KHz * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% ©2002 Rev. A, August 2002
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED