BC182B , 0.350W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 40ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
BC182B , 0.350W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 40
BC182B , 0.350W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 40BC182BBC182BNPN General Purpose Amplifier This device is designed for general purpose amplifier ap ..
BC182L ,NPN General Purpose AmpliferBC182LBC182LNPN General Purpose Amplifier• This device is designed for general purpose amplifier ap ..
BC182L ,NPN General Purpose AmpliferBC182LBC182LNPN General Purpose Amplifier• This device is designed for general purpose amplifier ap ..
BC182L ,NPN General Purpose AmpliferBC182LBC182LNPN General Purpose Amplifier• This device is designed for general purpose amplifier ap ..
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BC182B
NPN General Purpose Amplifer
BC182B BC182B NPN General Purpose Amplifier This device is designed for general purpose amplifier application at collector currents to 100mA. Sourced from process 10. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Emitter Voltage 50 V CEO V Collector-Base Voltage 60 V CBO V Emitter-Base Voltage 6 V EBO I Collector Current - Continuous 100 mA C T T Storage Junction Temperature Range - 55 ~ 150 °C J, STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V Collector-Emitter Breakdown Voltage I = 2mA, I = 0 50 V (BR)CEO C B V Collector-Base Breakdown Voltage I = 10μA, I = 0 60 V (BR)CBO C E V Emitter-Base Breakdown Voltage I = 10μA, I = 0 6 V (BR)EBO E C I Collector Cut-off Current V = 50V, V = 0 15 nA CBO CB BE I Emitter-Base Leakage Current V = 4V, I = 0 15 nA EBO EB E On Characteristics h DC Current Gain V = 5V, I = 10μA 40 FE CE C V = 5V, I = 100mA 80 CE C V (sat) Collector-Emitter Saturation Voltage I = 10mA, I = 0.5mA 0.25 V CE C B I = 100mA, I = 5mA 0.6 C B V (sat) Base-Emitter Saturation Voltage I = 100mA, I = 5mA 1.2 V BE C B V (on) Base-Emitter On Voltage V = 5V, I = 2mA 0.55 0.7 V BE CE C Dynamic Characteristics f Current Gain Bandwidth Product V = 5V, I = 10mA, f = 100MHz 150 MHz T CE C C Output Capacitance V = 10V, I = 0, f = 1MHz 5 pF ob CE C h Small Signal Current Gain V = 5V, I = 2mA, f = 1KHz 240 500 fe CE C NF Noise Figure V = 5V, I = 0.2mA 10 dB CE C R = 2KΩ, f = 1KHz, BW = 200Hz S ©2003 Rev. A, August 2003
