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Partno	Mfg	Dc	Qty	Available	Descript
BC161	ST	N/a	4000	avai	PNP SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES

BC161 ,PNP SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHESABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Collector-Base Voltage (I =0) -60 VCBO EV Coll ..
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BC161
PNP SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES
BC161
GENERAL PURPOSE TRANSISTORS
DESCRIPTION
The BC161isa silicon planar epitaxial PNP
transistorsin Jedec TO-39 metal case. They are
particularly designed for audio amplifiers and
switching applicationupto 1A.
The complementary NPN typeis the BC141.
INTERNAL SCHEMATIC DIAGRAM
November 1997
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage(IE =0) -60 V
VCEO Collector-Emitter Voltage(IB =0) -60 V
VEBO Emitter-Base Voltage(IC =0) -5 V Collector Current -1 A Base Current -0.1 A
Ptot Total Dissipationat Tamb≤45oC Tcase≤45oC
Tstg Storage Temperature -55to 175 oC Max. Operating Junction Temperature 175 oC
TO-39
1/5
THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
200 C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICES Collector Cut-off
Current (VBE =0)
VCE =-60V
VCE =-60V Tamb =150oC
V(BR)CBO∗ Collector-Base
Breakdown Voltage
(IE =0) =-100 μA-60 V
V(BR)CEO∗ Collector-Emitter
Breakdown Voltage
(IB =0) =-10 mA -60 V
V(BR)EBO∗ Emitter-Base
Breakdown Voltage
(IC =0) =-100 μA-5 V
VCE(sat)∗ Collector-Emitter
Saturation Voltage =-100 mA IB =-10 mA =-500 mA IB =-50 mA =-1A IB= -100 mA
-0.6 -1
VBE(on)∗ Base-Emitter On
Voltage =-1A VCE=-1V -1 -1.7 V
hFE∗ DC Current Gain IC =-100 μAVCE =-1V
for BC161
for BC161 Gr.6
for BC161 Gr.10
for BC161 Gr.16 =-100 mA VCE =-1V
for BC161
for BC161 Gr.6
for BC161 Gr.10
for BC161 Gr.16 =-1A VCE =-1V
for BC161
for BC161 Gr.6
for BC161 Gr.10
for BC161 Gr.16
250 Transition Frequency IC =-50 mA VCE =-10V 50 MHz
CCBO Collector Base
Capacitance =0 VCB =-20Vf= 1MHz 15 30 pF
CEBO Emitter Base
Capacitance =0 VCB= -0.5Vf= 1MHz 180 pF
ton Turn-on Time IC =-100 mA IB1=-5 mA 500 ns
toff Turn-off Time IC =-100 mA IB1 =IB2=-5 mA 650 ns
∗ Pulsed: Pulse duration=300μs, duty cycle≤ 1%
BC161
2/5
Collector-emitter SaturationVoltage. Base-emitter Voltage. Current Gain. Transition Frequency.
BC161
3/5
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX. 12.7 0.500 0.49 0.019 6.6 0.260 8.5 0.334 9.4 0.370 5.08 0.200 1.2 0.047 0.9 0.035
L45o (typ.) E
P008B
TO-39 MECHANICAL DATA
BC161
4/5
Information furnishedis believedtobe accurateand reliable. However, SGS-THOMSON Microelectronics assumesno responsabilityforthe
consequencesofuse ofsuch informationnorfor anyinfringementof patentsor otherrightsof third parties which may resultsfromits use.No
licenseis grantedby implicationor otherwise underany patentor patentrightsof SGS-THOMSON Microelectronics. Specifications mentionedthis publicationare subjectto change without notice.This publication supersedes andreplacesall information previouslysupplied.
SGS-THOMSONMicroelectronics productsarenot authorizedfor useascriticalcomponentsin lifesupportdevicesor systems withoutexpress
writtenapprovalof SGS-THOMSONMicroelectonics. 1997 SGS-THOMSONMicroelectronics- Printedin Italy- AllRights Reserved
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BC161
5/5
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