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BBY57-03W
Silicon High Q Hyperabrupt Tuning Diode
BBY 57-03W
Silicon Tuning Diode• Excellent linearity
• High Q hyperabrupt tuning diode
• Low series inductance
• High capacitance ratio
• Designed for low tuning voltage operation
for VCO's in mobile communications equipment
• For control elements such as TCXOs and VCXOs
Maximum Ratings
BBY 57-03W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC characteristics
AC characteristics
BBY 57-03W
Temperature coefficient of the diode
capacitance TCc = f (VR)
-4 10
-3 10
-2 10
-1 10
Diode capacitance CT = f (VR)
f = 1MHz
10
15
20
25
30
40
Normalized diode capacitance (TA) / C(25°C)= f (TA)
f = 1MHz, VR = Parameter
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
1.05
TA
25°C
:
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