BBY56-02w ,VaractordiodesBBY56...Silicon Tuning Diode• Excellent linearity• Low series resistance• Designed for low tuning v ..
BBY56-02W ,VaractordiodesCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BBY56-03W ,Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)BBY56...Silicon Tuning Diode• Excellent linearity• Low series resistance• Designed for low tuning v ..
BBY56-03W ,Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)CharacteristicsReverse current I nARV = 6 V - - 5RV = 6 V, T = 85 °C - - 100R AAC
BBY5603WE6327 , Excellent linearity
BBY56-03WE6327 , Excellent linearity
BD9325FJ-E2 , Simple Step-down Switching Regulators with Built-in Power MOSFET
BD9325FJ-E2 , Simple Step-down Switching Regulators with Built-in Power MOSFET
BD9326EFJ , Simple Step-down Switching Regulators with Built-in Power MOSFET
BD9327EFJ-E2 , Simple Step-down Switching Regulators with Built-in Power MOSFET
BD9328EFJ-E2 , Simple Step-down Switching Regulator with Built-in Power MOSFET
BD9328EFJ-E2 , Simple Step-down Switching Regulator with Built-in Power MOSFET
BBY56-02w-BBY56-03W
Varactordiodes
BBY56...
Silicon Tuning Diode• Excellent linearity
• Low series resistance
• Designed for low tuning voltage operation
for VCO's in mobile communications equipment
• Very low capacitance spread
BBY56-02W
BBY56-03W
Maximum Ratings at TA = 25°C, unless otherwise specified
BBY56...
Electrical Characteristics at TA = 25°C, unless otherwise specified
DC Characteristics
AC Characteristics
BBY56...
Diode capacitance CT = ƒ (VR)
f = 1MHz
10
20
30
40
50
60
70
80
100
Temperature coefficient of the diode
capacitance TCc = ƒ (VR)
f = 1 MHz
0.0001
0.0002
0.0003
0.0004
0.0007
0.0008
0.0009
0.001
0.0012
Reverse current IR = ƒ(VR)A = Parameter
-13 10
-12 10
-11 10
-10 10
-9 10
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