BBY52 E6327 ,Silicon High Q Hyperabrupt Dual Tunin...BBY 52Silicon Tuning Diode3• High Q hyperabrupt dual tuning diode• Designed for low tuning voltage ..
BBY53 ,VaractordiodesCharacteristicsReverse current I nARV = 4 V - - 10RV = 4 V, T = 85 °C - - 200R AAC
BBY53-02V ,VaractordiodesBBY53...Silicon Tuning Diode• High Q hyperabrupt tuning diode• Designed for low tuning voltage oper ..
BBY53-02W ,Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation)BBY53...Silicon Tuning Diode• High Q hyperabrupt tuning diode• Designed for low tuning voltage oper ..
BBY53-03W ,VaractordiodesCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BBY53-05W ,VaractordiodesBBY53...Silicon Tuning Diode• High Q hyperabrupt tuning diode• Designed for low tuning voltage oper ..
BD9134MUV-E2 , Output 2A or More High-efficiency Step-down Switching Regulator with Built-in Power MOSFET
BD9150MUV-E2 , Output 1.5A or Less High Efficiency Step-down Switching Regulator with Built-in Power MOSFET
BD9153MUV , Output 1.5A or Less High Efficiency Step-down Switching Regulator with Built-in Power MOSFET
BD9202EFS , White backlight LED drivers for medium to large LCD panels (SWREG type)
BD9325FJ-E2 , Simple Step-down Switching Regulators with Built-in Power MOSFET
BD9325FJ-E2 , Simple Step-down Switching Regulators with Built-in Power MOSFET
BBY52 E6327
Silicon High Q Hyperabrupt Dual Tunin...
BBY 52
Silicon Tuning Diode• High Q hyperabrupt dual tuning diode
• Designed for low tuning voltage operation
• For VCO's in mobile communications equipment
Maximum Ratings
BBY 52
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC characteristics
AC characteristics
BBY 52
Diode capacitance CT = f (VR)
f = 1MHz
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.6
Reverse current IR = f (VR)A = 25 °C
10
15
20
25
30
35
45
:
www.ic-phoenix.com
.
