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Partno	Mfg	Dc	Qty	Available	Descript
BB833 E6327 \|BB833E6327	INFINEON	N/a	36000	avai	Silicon Tuning Diode
BB833E6327	INFINEON	N/a	3000	avai	Silicon Tuning Diode
BB833E-6327 \|BB833E6327	SIEMENS	N/a	200	avai	Silicon Tuning Diode

BB833 E6327 ,Silicon Tuning DiodeBB 833Silicon Tuning Diode• Extended frequency range up to 2.5 GHz; special design for use in TV- ..
BB833E6327 ,Silicon Tuning DiodecharacteristicsReverse current I - - 20 nARV = 30 VRReverse current I - - 500RV = 30 V, T = 85 °CR ..
BB833E-6327 ,Silicon Tuning DiodeCharacteristics at T = 25°C, unless otherwise specified.AParameter Symbol Values Unitmin. typ. max. ..
BB837 ,Silicon Tuning Diode (Extented frequency range up to 2.8 GHz special design for use in TV-sat indoor units)CharacteristicsReverse current I nARV = 30 V - - 10RV = 30 V, T = 85 °C - - 200R AAC
BB837 ,Silicon Tuning Diode (Extented frequency range up to 2.8 GHz special design for use in TV-sat indoor units)BB837 /BB857...Silicon Tuning Diode

BB833 E6327-BB833E6327-BB833E-6327
Silicon Tuning Diode
BB 833
Silicon Tuning Diode
• Extended frequency range up to 2.5 GHz;
special design for use in TV-sat indoor units
• High capacitance ratio
Maximum Ratings
BB 833
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC characteristics
AC characteristics
1) In-line matching. For details please refer to Application Note 047
BB 833
Diode capacitance C
f = 1MHz010210V
Temperature coefficient of the diode
capacitance TCc = f (VR)
10 2
-5 10
-4 10
-3 10
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