BB659C ,Silicon Variable Capacitance Diode (For VHF-TV-tuners High capacitance ratio Low series inductance Low series resistance)Characteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BB659C-02V ,VaractordiodesCharacteristicsReverse current I nARV = 30 V - - 10RV = 30 V, T = 85 °C - - 200R AAC
BB664 ,VaractordiodesCharacteristicsReverse current I nARV = 30 V - - 10RV = 30 V, T = 85 °C - - 100R AAC
BB664-02V ,VaractordiodesBB644 /BB664...Silicon Variable Capacitance Diodes
BB639C-BB659C-BB659C-02V
Varactordiodes
BB639C/BB659C...
Silicon Variable Capacitance Diode For tuning of extended frequency band
in VHF TV / VTR tuners High capacitance ratio Low series inductance Low series resistance Excellent uniformity and matching due to
"in-line" matching assembly procedure
BB639C
BB659C/-02V
Maximum Ratings at TA = 25°C, unless otherwise specified
BB639C/BB659C...
Electrical Characteristics at TA = 25°C, unless otherwise specified
DC Characteristics
AC Characteristics1For details please refer to Application Note 047
BB639C/BB659C...
Diode capacitance CT = (VR)
f = 1MHz
10
15
20
25
30
40
Temperature coefficient of the diode
capacitance TCc = (VR)
10 2
-5 10
-4 10
-3 10
TC
Reverse current IR = (TA)R = 28V
-3010 10 10 10
Reverse current IR = (VR)A = Parameter
10 2
-1 10 10 10 10 10
:
www.ic-phoenix.com
.
