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BAY72
High Conductance Fast Diode
BAY72 BAY72 DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value Units V Maximum Repetitive Reverse Voltage 125 V RRM I Average Rectified Forward Current 200 mA F(AV) I Non-repetitive Peak Forward Surge Current FSM Pulse Width = 1.0 second 1.0 A Pulse Width = 1.0 microsecond 4.0 A Storage Temperature Range -65 to +200 T °C stg Operating Junction Temperature 175 T °C J *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 500 mW D Thermal Resistance, Junction to Ambient 300 R °C/W θJA Electrical Characteristics T = 25°C unless otherwise noted A Symbol Parameter Test Conditions Min Max Units V Breakdown Voltage 125 V I = 100 μA R R V Forward Voltage I = 1.0 mA 0.51 0.64 V F F I = 10 mA 0.63 0.78 V F I = 50 mA 0.73 0.92 V F I = 100 mA 0.78 1.0 V F I Reverse Current V = 100 V 100 nA R R V = 100 V, T = 125 C 100 A ° μ R A C Total Capacitance V = 0, f = 1.0 MHz 5 pF T R t Reverse Recovery Time I = I = 30 mA, I = 1.0 mA 50 ns rr1 F R rr t Reverse Recovery Time I = 30 mA, V = 35 V 400 ns rr2 F R 2002 BAY72, Rev. A
