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Partno	Mfg	Dc	Qty	Available	Descript
BAW101S	NXP	N/a	5087	avai	High voltage double diode

BAW101S ,High voltage double diodeLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
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BAW101S
High voltage double diode

NXP Semiconductors Product data sheet
High voltage double diode BAW101S
FEATURES Small plastic SMD package High switching speed: max. 50 ns High continuous reverse voltage: 300 V Electrically insulated diodes.
APPLICATIONS High voltage switching Automotive Communication.
DESCRIPTION
The BAW101S is a high-speed switching diode array with
two separate dice, fabricated in planar technology and
encapsulated in a small SOT363 plastic SMD package.
MARKING
Note ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
PINNING
NXP Semiconductors Product data sheet
High voltage double diode BAW101S
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm2.
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
Note Pulse test: pulse width = 300 µs; δ = 0.02.
NXP Semiconductors Product data sheet
High voltage double diode BAW101S
THERMAL CHARACTERISTICS
Notes One or more diodes loaded. Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm2.
NXP Semiconductors Product data sheet
High voltage double diode BAW101S
NXP Semiconductors Product data sheet
High voltage double diode BAW101S

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