BAV99S ,Silicon Switching Diode ArraycharacteristicsBreakdown voltage 70 - - VV(BR)I = 100 µA(BR)Forward voltage mVVFI = 1 mA - - 715 ..
BAV99T ,Switching DiodesCharacteristicsBreakdown voltage V 85 - - V(BR)I = 100 µA(BR)Reverse current I µARV = 70 V - - 0. ..
BAV99TPT , SWITCHING DIODE VOLTAGE 85 Volts CURRENT 0.15 Ampere
BAV99TPT , SWITCHING DIODE VOLTAGE 85 Volts CURRENT 0.15 Ampere
BAV99U ,General Purpose DiodesBAV99...Silicon Switching Diode• For high-speed switching
BAV99W ,Switching DiodesTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitTotal Device Dissipation FR−5 Board, (Note 1) ..
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BAV99S
Silicon Switching Diode Array
BAV 99S
Silicon Switching Diode Array For high-speed switching applications Connected in series Internal (galvanic) isolated diodes
in one package
EHA072875421
C1/A2C2A1
C1/A2C2A1
Di1
Di2
Maximum Ratings
Thermal Resistance
BAV 99S
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC characteristics
AC characteristics
Test circuit for reverse recovery timeEHN00019
Pulse generator: tp = 100ns, D = 0.05,
tr = 0.6ns, Ri = 50
Oscillograph: R = 50, tr = 0.35ns,
C 1pF
BAV 99S
Forward current IEHB00076F
1.5V1.00.50max
Forward current IF = f (TA*;TS)
* Package mounted on epoxy
50
100
150
200
300
Permissible Pulse Load RthJS = f(tp)
10 0 10 10 10 10
thJS
Permissible Pulse Load Fmax / IFDC = f(tp) 0 10 10 10
IFmax
FDC
BAV 99S
Forward voltage V1.050100150AF50100150EHB00075A
:
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