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BAV74
Small Signal Diode
BAV70 / BAV74 BAV70 / 74 Connection Diagram 3 3 3 A4 2 1 2 1 12 ������� ����� �� ����� �� SOT-23 Small Signal Diode Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value Units V Maximum Repetitive Reverse Voltage BAV70 70 V RRM 50 V BAV74 I Average Rectified Forward Current 200 mA F(AV) I Non-repetitive Peak Forward Surge Current FSM Pulse Width = 1.0 second 1.0 A Pulse Width = 1.0 microsecond 2.0 A Storage Temperature Range -55 to +150 T °C stg Operating Junction Temperature 150 T °C J *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 350 mW D Thermal Resistance, Junction to Ambient 357 R °C/W θJA Electrical Characteristics T = 25°C unless otherwise noted A Symbol Parameter Test Conditions Min Max Units V Breakdown Voltage BAV70 I = 100 μA 70 V R R BAV74 50 V I = 100 μA R V Forward Voltage BAV70 I = 1.0 mA 715 mV F F I = 10 mA 855 mV F I = 50 mA 1.0 V F BAV74 I = 150 mA 1.25 V F I = 100 mA 1.0 V F I Reverse Current BAV70 V = 25 V, T = 150 C 60 A R ° μ R A 5.0 V = 70 V μA R 100 V = 70 V, T = 150 C ° μA R A 100 BAV74 V = 50 V nA R 100 V = 50 V, T = 150°C μA R A C Tatal Capacitance BAV70 V = 0, f = 1.0 MHz 1.5 pF T R BAV74 V = 0, f = 1.0 MHz 2.0 pF R t Reverse Recovery Time I = I = 10 mA, I = 1.0 mA, 6.0 ns BAV70 rr F R RR R = 100Ω L BAV74 I = I = 10 mA, I = 1.0 mA, 4.0 ns F R RR R = 100Ω L BAV70/74, Rev. C 2001
