BAV70M ,High-speed switching diodesGeneral descriptionHigh-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)p ..
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BAV70T-7-F , SURFACE MOUNT FAST SWITCHING DIODE
BAV70TT1 ,Dual Switching DiodeELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
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BD434S ,PNP Epitaxial Silicon TransistorBD434/436/438BD434/436/438Medium Power Linear and Switching
BAV70M-BAV70S
High-speed switching diodes
Product profile1.1 General descriptionHigh-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
1.2 Features
1.3 Applications High-speed switching General-purpose switching
1.4 Quick reference data[1] When switched from IF=10 mA to IR=10 mA; RL= 100 Ω; measured at IR=1 mA.
V70 series
High-speed switching diodes
Rev. 07 — 27 November 2007 Product data sheet
Table 1. Product overviewBAV70 SOT23 - TO-236AB small dual common cathode
BAV70M SOT883 SC-101 - leadless ultra
small
dual common cathode
BAV70S SOT363 SC-88 - very small quadruple common
cathode/common cathode
BAV70T SOT416 SC-75 - ultra small dual common cathode
BAV70W SOT323 SC-70 - very small dual common cathode High switching speed: trr≤ 4ns n Low capacitance: Cd≤ 1.5 pF Low leakage current n Reverse voltage: VR≤ 100V Small SMD plastic packages
Table 2. Quick reference data
Per diode reverse current VR=80V - - 0.5 μA reverse voltage - - 100 V
trr reverse recovery time [1] --4 ns
NXP Semiconductors BAV70 series
High-speed switching diodes Pinning information Ordering information
Table 3. Pinning
BAV70; BAV70T; BAV70W anode (diode1) anode (diode2) common cathode
BAV70M anode (diode1) anode (diode2) common cathode
BAV70S anode (diode1) anode (diode2) common cathode (diode3
and diode4) anode (diode3) anode (diode4) common cathode (diode1
and diode2)
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006aab034
Transparent
top view
006aab034
006aab104
Table 4. Ordering informationBAV70 - plastic surface-mounted package; 3 leads SOT23
BAV70M SC-101 leadless ultra small plastic package; 3 solder lands;
body 1.0× 0.6× 0.5 mm
SOT883
BAV70S SC-88 plastic surface-mounted package; 6 leads SOT363
BAV70T SC-75 plastic surface-mounted package; 3 leads SOT416
BAV70W SC-70 plastic surface-mounted package; 3 leads SOT323
NXP Semiconductors BAV70 series
High-speed switching diodes Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Limiting values
Table 5. Marking codesBAV70 A4*
BAV70M S4
BAV70S A4*
BAV70T A4
BAV70W A4*
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per diodeVRRM repetitive peak reverse
voltage 100 V reverse voltage - 100 V forward current
BAV70 Tamb≤25°C - 215 mA
BAV70M Ts =90°C - 150 mA
BAV70S Ts =60°C - 250 mA
BAV70T Ts =90°C - 150 mA
BAV70W Tamb≤25°C - 175 mA
IFRM repetitive peak forward
current
BAV70 - 450 mA
BAV70M - 500 mA
BAV70S - 450 mA
BAV70T - 500 mA
BAV70W - 500 mA
IFSM non-repetitive peak forward
current
square wave [1] =1 μs- 4 A =1ms - 1 A=1s - 0.5 A
NXP Semiconductors BAV70 series
High-speed switching diodes[1] Tj =25 °C prior to surge.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] Reflow soldering is the only recommended soldering method.
Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Ptot total power dissipation [2]
BAV70 Tamb≤25°C - 250 mW
BAV70M Tamb≤25°C [3]- 250 mW
BAV70S Ts =60°C - 350 mW
BAV70T Ts =90°C - 170 mW
BAV70W Tamb≤25°C - 200 mW
Per device forward current
BAV70 Tamb≤25°C - 125 mA
BAV70M Ts =90°C - 75 mA
BAV70S Ts =60°C - 100 mA
BAV70T Ts =90°C - 75 mA
BAV70W Tamb≤25°C - 100 mA junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 6. Limiting values …continuedIn accordance with the Absolute Maximum Rating System (IEC 60134).
Table 7. Thermal characteristics
Per diodeRth(j-a) thermal resistance from
junction to ambient
in free air [1]
BAV70 - - 500 K/W
BAV70M [2]- - 500 K/W
BAV70W - - 625 K/W
Rth(j-t) thermal resistance from
junction to tie-point
BAV70 - - 360 K/W
BAV70W - - 300 K/W
Rth(j-sp) thermal resistance from
junction to solder point
BAV70S - - 255 K/W
BAV70T - - 350 K/W
NXP Semiconductors BAV70 series
High-speed switching diodes Characteristics[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
[2] When switched from IF=10 mA to IR=10 mA; RL= 100 Ω; measured at IR=1 mA.
[3] When switched from IF=10 mA; tr =20ns.
Table 8. CharacteristicsTamb =25 °C unless otherwise specified.
Per diode forward voltage [1]=1 mA - - 715 mV=10 mA - - 855 mV=50 mA --1 V= 150 mA - - 1.25 V reverse current VR=25V --30 nA=80V - - 0.5 μA =25V;Tj= 150°C --30 μA =80V;Tj= 150°C - - 100 μA diode capacitance VR=0 V; f=1 MHz - - 1.5 pF
trr reverse recovery time [2] --4 ns
VFR forward recovery voltage [3]- - 1.75 V
NXP Semiconductors BAV70 series
High-speed switching diodes
NXP Semiconductors BAV70 series
High-speed switching diodes Test information
NXP Semiconductors BAV70 series
High-speed switching diodes Package outline
