BAT68-07 ,Silicon RF Schottky DiodecharacteristicsBreakdown voltage 8 - - VV(BR)I = 10 µA(BR)Reverse current - - 0.1 µAIRV = 1 VRRever ..
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BAT721 ,Schottky barrier single diode
BAT721A ,Schottky barrier diodes in small packages
BAT721A ,Schottky barrier diodes in small packages
BAT721C ,Schottky barrier diodes in small packages
BD243C. ,COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSBD243B/BD243CBD244B/BD244C®COMPLEMENTARY SILICON POWER TRANSISTORS■ STMicroelectronics PREFERREDSAL ..
BD244B ,COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS
BD244C ,COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSBD243B/BD243CBD244B/BD244C®COMPLEMENTARY SILICON POWER TRANSISTORS■ STMicroelectronics PREFERREDSAL ..
BD245 , NPN SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS
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BAT68-07
Silicon RF Schottky Diode
BAT 68-07
Silicon Schottky Diodes• For mixer applications in the VHF / UHF range
• For high-speed switching applications4
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Thermal Resistance
BAT 68-07
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
DC characteristics
AC characteristics
BAT 68-07
Forward current I* Package mounted on alumina
0˚C0FT;TS100150
Reverse current I10
EHD07102V
150CTA=3V8525
Diode capacitance CT = f (VR)
f = 1MHz0
EHD07103T
Forward current IF = f (VF)A = Parameter10F
BAT 68-07
Differential forward resistance rF)
f = 10 kHz Ι 010110mA 210101010
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