BAT64-BAT64-02W-BAT64-04-BAT64-05-BAT64-06 Fast Delivery |IC PHOENIX CO.,LIMITED

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Partno	Mfg	Dc	Qty	Available	Descript
BAT64	INFINEON	N/a	255000	avai	Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)
BAT64	SIEMENS	N/a	3000	avai	Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)
BAT64-02W \|BAT6402W	INF	N/a	30000	avai	Schottky Diodes
BAT64-04 \|BAT6404	NXP	N/a	30000	avai	Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)
BAT64-05 \|BAT6405	INFINEON	N/a	12000	avai	Schottky Diodes
BAT64-06 \|BAT6406	INFINEON	N/a	10500	avai	Schottky Diodes

BAT64 ,Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)Characteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BAT64 ,Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)Characteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BAT64-02V ,Silicon Schottky DiodesCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BAT64-02V ,Silicon Schottky DiodesBAT64...Silicon Schottky Diodes• For low-loss, fast-recovery, meter protection, bias isolation an ..
BAT64-02W ,Schottky DiodesCharacteristics40 - - VBreakdown voltage V(BR)I = 10 µA(BR)Reverse current I µARV = 30 V - - 2RV ..
BAT64-04 ,Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)Characteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BD238 ,Leaded Power Transistor General PurposeMaximum ratings applied to the device are individual stress limit values (notnormal operating condi ..
BD239ATU ,NPN Epitaxial Silicon TransistorApplications Complement to BD240/A/B/C respectivelyTO-22011.Base 2.Collector 3.EmitterNPN Ep ..
BD239C , 30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 15 hFE.BD239C®NPN SILICON POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPEDESCRIPTION ..
BD239C , 30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 15 hFE.BD239C®NPN SILICON POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPEDESCRIPTION ..
BD239C , 30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 15 hFE.BD239C®NPN SILICON POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPEDESCRIPTION ..
BD239C , 30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 15 hFE.BD239C®NPN SILICON POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPEDESCRIPTION ..

BAT64-BAT64-02W-BAT64-04-BAT64-05-BAT64-06
Schottky Diodes
BAT64...
Silicon Schottky Diodes
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping application
• Integrated diffused guard ring
• Low forward voltage
BAT64BAT64-06
BAT64-06W
BAT64-02V
BAT64-02W
BAT64-05
BAT64-05W
BAT64-04
BAT64-04W
BAT64-07
ESD: Electrostatic discharge sensitive device, observe handling precaution!
* Preliminary data
BAT64...
Maximum Ratings at TA = 25°C, unless otherwise specified
Thermal Resistance
1For calculation of RthJA please refer to Application Note Thermal Resistance
BAT64...
Electrical Characteristics at TA = 25°C, unless otherwise specified
DC Characteristics
AC Characteristics
BAT64...
Diode capacitance C
f = 1MHz0R20V30
Reverse current I
0102030EHB00058R= 125
Forward current IF = ƒ (VF)A = ParameterF
Forward current IF = ƒ (TS)
BAT64W
50
100
150
200
300
BAT64...
Forward current IF = ƒ (TS)
BAT64-02V, BAT64-02W
50
100
150
200
300
Forward current IF = ƒ (TS)
BAT64-04, BAT64-06, BAT64-07
50
100
150
200
300
Forward current IF = ƒ (TS)
BAT64-04W, BAT64-06W
50
100
150
200
300
Forward current IF = ƒ (TS)
BAT64-05
50
100
150
200
300
BAT64...
Forward current IF = ƒ (TS)
BAT64-05W
50
100
150
200
300
Permissible Pulse LoadFmax/ IFDC = ƒ (tp)
BAT64-02V, BAT64-02W0 10 10 10
Fmax
FDC
Permissible Puls Load RthJS = ƒ (tp)
BAT64-02V, BAT64-02W
10 0
-1 10 10 10 10 10
thJS
Permissible Puls Load RthJS = ƒ (tp)
BAT64-04W, BAT64-06W0
-1 10 10 10 10 10
thJS

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