BAT64-02V-BAT64-07 Fast Delivery |IC PHOENIX CO.,LIMITED

Home › B › B7 > BAT64-02V-BAT64-07,Silicon Schottky Diodes

If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email

Partno	Mfg	Dc	Qty	Available	Descript
BAT64-02V \|BAT6402V	INFINEON	N/a	3000	avai	Silicon Schottky Diodes
BAT64-02V \|BAT6402V	INF	N/a	30000	avai	Silicon Schottky Diodes
BAT64-07 \|BAT6407	INFINEON	N/a	3000	avai	Silicon Schottky Diodes

BAT64-02V ,Silicon Schottky DiodesCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BAT64-02V ,Silicon Schottky DiodesBAT64...Silicon Schottky Diodes• For low-loss, fast-recovery, meter protection, bias isolation an ..
BAT64-02W ,Schottky DiodesCharacteristics40 - - VBreakdown voltage V(BR)I = 10 µA(BR)Reverse current I µARV = 30 V - - 2RV ..
BAT64-04 ,Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)Characteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BAT64-04E6327 , Silicon Schottky Diodes
BAT64-04W ,Schottky DiodesCharacteristics40 - - VBreakdown voltage V(BR)I = 10 µA(BR)Reverse current I µARV = 30 V - - 2RV ..
BD239ATU ,NPN Epitaxial Silicon TransistorApplications Complement to BD240/A/B/C respectivelyTO-22011.Base 2.Collector 3.EmitterNPN Ep ..
BD239C , 30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 15 hFE.BD239C®NPN SILICON POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPEDESCRIPTION ..
BD239C , 30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 15 hFE.BD239C®NPN SILICON POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPEDESCRIPTION ..
BD239C , 30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 15 hFE.BD239C®NPN SILICON POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPEDESCRIPTION ..
BD239C , 30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 15 hFE.BD239C®NPN SILICON POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPEDESCRIPTION ..
BD239C. , 30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 15 hFE.

BAT64-02V-BAT64-07
Silicon Schottky Diodes
BAT64...
Silicon Schottky Diodes
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping application
• Integrated diffused guard ring
• Low forward voltage
BAT64BAT64-06
BAT64-06W
BAT64-02V
BAT64-02W
BAT64-05
BAT64-05W
BAT64-04
BAT64-04W
BAT64-07
ESD: Electrostatic discharge sensitive device, observe handling precaution!
* Preliminary data
BAT64...
Maximum Ratings at TA = 25°C, unless otherwise specified
Thermal Resistance
1For calculation of RthJA please refer to Application Note Thermal Resistance
BAT64...
Electrical Characteristics at TA = 25°C, unless otherwise specified
DC Characteristics
AC Characteristics
BAT64...
Diode capacitance C
f = 1MHz0R20V30
Reverse current I
0102030EHB00058R= 125
Forward current IF = ƒ (VF)A = ParameterF
Forward current IF = ƒ (TS)
BAT64W
50
100
150
200
300
BAT64...
Forward current IF = ƒ (TS)
BAT64-02V, BAT64-02W
50
100
150
200
300
Forward current IF = ƒ (TS)
BAT64-04, BAT64-06, BAT64-07
50
100
150
200
300
Forward current IF = ƒ (TS)
BAT64-04W, BAT64-06W
50
100
150
200
300
Forward current IF = ƒ (TS)
BAT64-05
50
100
150
200
300
BAT64...
Forward current IF = ƒ (TS)
BAT64-05W
50
100
150
200
300
Permissible Pulse LoadFmax/ IFDC = ƒ (tp)
BAT64-02V, BAT64-02W0 10 10 10
Fmax
FDC
Permissible Puls Load RthJS = ƒ (tp)
BAT64-02V, BAT64-02W
10 0
-1 10 10 10 10 10
thJS
Permissible Puls Load RthJS = ƒ (tp)
BAT64-04W, BAT64-06W0
-1 10 10 10 10 10
thJS

TEL:86-533-2716050 FAX:86-533-2716790