BAT62-07L4 ,RF Schottky Diodes for Detector ApplicationsBAT62...Silicon Schottky Diode• Low barrier diode for detectors up to GHz frequenciesBAT62 BAT62- ..
BAT62-07W ,Schottky DiodesCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.A ..
BAT62-08S ,Schottky DiodesCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BAT63 ,Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies)
BAT64 ,Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)Characteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BAT64 ,Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring)Characteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BD236. ,Leaded Power Transistor General PurposeBD235 BD236BD237 BD238®COMPLEMENTARY SILICON POWER TRANSISTORS■ STMicroelectronics PREFERREDSALESTY ..
BD237 ,Leaded Power Transistor General PurposeMAXIMUM RATINGSÎÎÎÎÎ80 VOLTSRating Symbol Value UnitÎÎÎÎÎÎ25 WATTSCollector−Emitter Voltage V 80 Vd ..
BD238 ,Leaded Power Transistor General PurposeMaximum ratings applied to the device are individual stress limit values (notnormal operating condi ..
BD239ATU ,NPN Epitaxial Silicon TransistorApplications Complement to BD240/A/B/C respectivelyTO-22011.Base 2.Collector 3.EmitterNPN Ep ..
BD239C , 30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 15 hFE.BD239C®NPN SILICON POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPEDESCRIPTION ..
BD239C , 30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 15 hFE.BD239C®NPN SILICON POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPEDESCRIPTION ..
BAT62-07L4
RF Schottky Diodes for Detector Applications
BAT62...
Silicon Schottky Diode• Low barrier diode for detectors up to GHz
frequencies
BAT62BAT62-09SBAT62-02L
BAT62-02W
BAT62-03W
BAT62-08SBAT62-07W
BAT62-07L4
ESD: Electrostatic discharge sensitive device, observe handling precaution!*Preliminary Data
BAT62...
Maximum Ratings at TA = 25°C, unless otherwise specified
Thermal Resistance
DC CharacteristicsFor calculation of RthJA please refer to Application Note Thermal Resistance
BAT62...
Electrical Characteristics at TA = 25°C, unless otherwise specified
AC Characteristics
BAT62...
Diode capacitance Cf = 1MHz0.0R2030V40
Reverse current IR = ƒ(VR)A = Parameter
-1 10 10 10 10 10
Forward current IF = ƒ (VF)A = Parameter10 10 10 10
Forward current IF = ƒ (TS)
BAT62
10
12
14
16
18
22
BAT62...
Forward current IF = ƒ (TS)
BAT62-02L, -07L4
10
12
14
16
18
22
Forward current IF = ƒ (TS)
BAT62-02W
10
12
14
16
18
22
Forward current IF = ƒ (TS)
BAT62-03W
10
12
14
16
18
22
Forward current IF = ƒ (TS)
BAT62-07W
10
12
14
16
18
22
BAT62...
Forward current IF = ƒ (TS)
BAT62-08S
10
12
14
16
18
22
Permissible Puls Load RthJS = ƒ (tp)
BAT620 10 10 10
thJS
Permissible Pulse LoadFmax/ IFDC = ƒ (tp)
BAT620 10 10
Fmax
FDC
