BAT60JFILM ,SMALL SIGNAL SCHOTTKY DIODEFEATURES AND BENEFITS60A Kn VERY SMALL CONDUCTION LOSSESn NEGLIGIBLE SWITCHING LOSSESn LOW FORWARD ..
BAT62 ,Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies.)BAT62...Silicon Schottky Diode
BAT60JFILM
SMALL SIGNAL SCHOTTKY DIODE
BAT60JJanuary 2003- Ed:6A
SMALL SIGNAL SCHOTTKY DIODE VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP EXTREMELY FAST SWITCHING SURFACE MOUNTED DEVICE
FEATURES AND BENEFITSSchottky barrier diode encapsulatedina SOD-323
small SMD package.
This device is intended for use in portable
equipments.Itis suited for DCto DC converters,
step-up conversion and power management.
DESCRIPTION
ABSOLUTE RATINGS (limiting values)
(*) Mountedon epoxy board with recommendedpad layout.
THERMAL RESISTANCE dPtot
dTj Rthj a< − thermal runaway conditionfora diodeonits own heatsink
BAT60J
STATIC ELECTRICAL CHARACTERISTICSPulse test:*tp= 380μs,δ <2%tp= 5ms,δ <2% evaluate the conduction losses the following equation:
P=0.38xIF(AV)+ 0.17IF2 (RMS)
BAT60J0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.70.00
PF(av)(W)
Fig. 1: Average forward power dissipation versus
average forward current. 25 50 75 100 125 1500.0
IF(A)
Fig. 2-1: Peak forward current versus ambient
temperature (δ = 0.11). 25 50 75 100 125 150
IF(av)(A)
Fig. 2-2: Average forward current versus ambient
temperature (δ = 0.5).
1E-3 1E-2 1E-1 1E+0
IM(A)
Fig. 3: Non repetitive surge peak forward current
versus overload duration (maximum values).
1E-4 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2
1E-3
1E-2
1E-1
1E+0
Zth(j-a)/Rth(j-a)
Fig.4: Relative variationof thermal impedance junc-
tionto ambient versus pulse duration (Epoxy printed
circuit board FR4 with recommended pad layout).
0123456789 101E-4
1E-3
1E-2
1E-1
1E+0
1E+1
IR(mA)
Fig.5: Reverse leackage current versus reverse
voltage applied (typical values).
BAT60J 25 50 75 100 125 1501E-1
1E+0
1E+1
1E+2
1E+3
1E+4
1E+5
IR[Tj] / IR[Tj=25°C]
Fig.6: Reverse leackage current versus junction
temperature (typical values).
C(pF)
Fig.7: Junction capacitance versus reverse voltage
applied (typical values).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
1E-1
1E+0
1E+1
IFM(A)
Fig. 8-1: Forward voltage drop versus forward cur-
rent (High level).
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.80.0
IFM(A)
Fig. 8-2: Forward voltage drop versus forward cur-
rent (Low level). 10 2030405060708090 100
Rth(j-a) (°C/W)
Fig.9: Thermal resistance junctionto ambient ver-
sus copper surface (epoxy printed circuit board FR4,
copper thickness: 35μm).
BAT60JInformationfurnishedis believedtobeaccurateand reliable.However, STMicroelectronics assumesno responsibilityforthe consequencesof
useof suchinformation norfor anyinfringementof patentsorotherrightsof third partieswhich may result fromitsuse. Nolicenseis grantedby
implicationor otherwise underany patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
change withoutnotice.Thispublication supersedesand replacesall information previouslysupplied.
STMicroelectronics productsarenot authorizedfor useas critical componentsinlife support devicesor systems without express written
approvalof STMicroelectronics.
TheST logoisa registered trademarkof STMicroelectronics 2003 STMicroelectronics- Printedin Italy-All rights reserved.
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http://
PACKAGE MECHANICAL DATASOD-323 Epoxy meets UL94V-0
MARKING
:
www.ic-phoenix.com
.
