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Partno	Mfg	Dc	Qty	Available	Descript
BAT60J	ST	N/a	75000	avai	SMALL SIGNAL SCHOTTKY DIODE

BAT60J ,SMALL SIGNAL SCHOTTKY DIODEFEATURES AND BENEFITS60A Kn VERY SMALL CONDUCTION LOSSESn NEGLIGIBLE SWITCHING LOSSESn LOW FORWARD ..
BAT60JFILM ,SMALL SIGNAL SCHOTTKY DIODEFEATURES AND BENEFITS60A Kn VERY SMALL CONDUCTION LOSSESn NEGLIGIBLE SWITCHING LOSSESn LOW FORWARD ..
BAT62 ,Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies.)BAT62...Silicon Schottky Diode

BAT60J
SMALL SIGNAL SCHOTTKY DIODE
BAT60J
May 2000- Ed:4A
SMALL SIGNAL SCHOTTKY DIODE VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP EXTREMELY FAST SWITCHING SURFACE MOUNTED DEVICE
FEATURES AND BENEFITS
Schottky barrier diode encapsulatedina SOD-323
small SMD package.
This device is intended for use in portable
equipments.Itis suited for DCto DC converters,
step-up conversion and power management.
DESCRIPTION
SOD-323
Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 10 V Peak forward current δ= 0.11 3 A
IFSM Surge non repetitive forward current tp=10ms 5 A
Ptot Power Dissipation Ta=25°C 310 mW
Tstg Storage temperature range -65to +150 °C Maximum operating junction temperature* 150 °C Maximum temperaturefor soldering during 10s 260 °C
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
Rth (j-a) Junctionto ambient(*) 400 °C/W
(*) Mountedon epoxy board with recommendedpad layout.
THERMAL RESISTANCE dPtot
dTj Rthj a< − thermal runaway conditionfora diodeonits own heatsink K60
BAT60J
Symbol Tests Conditions Tests conditions Min. Typ. Max. Unit* Forward voltage drop Tj= 25°CIF=10 mA 0.28 0.32 V= 100 mA 0.35 0.40=1A 0.53 0.58** Reverse leakage current Tj= 25°CVR =5V 1 3 μA= 25°CVR=8V 1.3 4= 80°CVR=8V 73 150
STATIC ELECTRICAL CHARACTERISTICS
Pulse test:*tp= 380μs,δ <2%tp= 5ms,δ <2% evaluate the conduction losses the following equation:= 0.38x IF(AV)+ 0.17IF2 (RMS)
BAT60J
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.70.00
IF(av)(A)
PF(av)(W)
δ=tp/T tp=0.05δ=0.1δ=0.2 δ=0.5=1
Fig.1: Average forward power dissipation versus
average forward current. 25 50 75 100 125 1500.0
Tamb(°C)
IF(A)
δ=tp/T tp
Fig. 2-1: Peak forward current versus ambient
temperature(δ= 0.11). 25 50 75 100 125 1500.00
Tamb(°C)
IF(av)(A)
δ=tp/T tp
Fig. 2-2: Average forward current versus ambient
temperature(δ= 0.5).
1E-3 1E-2 1E-1 1E+00.0
t(s)
IM(A)
Ta=25°C
Ta=50°C
Ta=75°C
δ=0.5
Fig.3: Non repetitive surge peak forward current
versus overload duration (maximum values).
1E-4 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2
1E-3
1E-2
1E-1
1E+0
t(s)
Zth(j-a)/Rth(j-a)=0.50.20.1
Singlepulse
δ=tp/T tp
Fig.4: Relative variationof thermal impedance junc-
tionto ambient versus pulseduration (Epoxy printed
circuitboardFR4 with recommended pad layout).
012 3456789 101E-4
1E-3
1E-2
1E-1
1E+0
1E+1
VR(V)
IR(mA)
Tj=80°C
Tj=25°C
Tj=150°C
Fig.5: Reverse leackage current versus reverse
voltage applied (typical values).
BAT60J 25 50 75 100 125 1501E-1
1E+0
1E+1
1E+2
1E+3
1E+4
1E+5
Tj(°C)
IR[Tj]/ IR[Tj=25°C]
VR=8V
Fig.6: Reverse leackage current versus junction
temperature(typical values).
VR(V)
C(pF)
F=1MHz
Tj=25°C
Fig.7: Junction capacitance versusreverse voltage
applied (typical values).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
1E-1
1E+0
1E+1
VFM(V)
IFM(A)
Tj=150°C
(Typicalvalues)
Tj=80°C
(Typicalvalues)
Tj=25°C
(Maximumvalues)
Fig. 8-1: Forward voltage drop versus forwardcur-
rent (High level).
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.80.0
VFM(V)
IFM(A)
Tj=150°C
(Typicalvalues)
Tj=25°C
(Maximumvalues)Tj=80°C
(Typicalvalues)
Fig. 8-2: Forward voltage drop versus forward cur-
rent (Low level). 1020 304050 607080 90 100
S(Cu) (mm )
Rth(j-a) (°C/W)
IF=0.75A
Fig. 9:Thermal resistance junctionto ambient ver-
sus coppersurface (epoxy printed circuit board FR4,
copper thickness: 35μm).
BAT60J
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useof suchinformation norforany infringementof patentsor otherrightsof third partieswhich may resultfrom itsuse.No license isgrantedby
implicationor otherwise underany patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
change without notice.This publication supersedesand replacesall information previously supplied.
STMicroelectronics productsarenot authorizedforuseas critical componentsinlife support devicesor systems without express writtenap-
provalof STMicroelectronics.
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PACKAGE MECHANICAL DATA
SOD-323c
REF.
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max. 1.17 0.046 0 0.1 0 0.004 0.25 0.44 0.01 0.017 0.1 0.25 0.004 0.01 1.52 1.8 0.06 0.071 1.11 1.45 0.044 0.057 2.3 2.7 0.09 0.106 0.1 0.46 0.004 0.02 0.1 0.41 0.004 0.016
Type Marking Package Weight Base qty Delivery mode
BAT60J 60 SOD-323 0.005g. 3000 Tape& reel Epoxy meets UL94V-0
MARKING
This datasheet has been :
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