BAT60B ,Schottky DiodesCharacteristicsReverse current I µARV = 5 V - 5 15RV = 8 V - 10 25RV = 5 V, T = 80 °C - 100 800R ..
BAT60B E6327 , Silicon Schottky Diode
BAT60B E6327 , Silicon Schottky Diode
BAT60J ,SMALL SIGNAL SCHOTTKY DIODEFEATURES AND BENEFITS60A Kn VERY SMALL CONDUCTION LOSSESn NEGLIGIBLE SWITCHING LOSSESn LOW FORWARD ..
BAT60JFILM ,SMALL SIGNAL SCHOTTKY DIODEFEATURES AND BENEFITS60A Kn VERY SMALL CONDUCTION LOSSESn NEGLIGIBLE SWITCHING LOSSESn LOW FORWARD ..
BAT62 ,Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies.)BAT62...Silicon Schottky Diode
BAT60B
Schottky Diodes
BAT60B...
Silicon Schottky Diode High current rectifier Schottky diode with
very low VF drop (typ. 0.24 V at IF = 10mA) For power supply applications For clamping and protection in
low voltage applications For detection and step-up-conversion
BAT60B
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings at TA = 25°C, unless otherwise specified
Thermal Resistance1For calculation of RthJA please refer to Application Note Thermal Resistance
BAT60B...
Electrical Characteristics at T = 25°C, unless otherwise specified
DC Characteristics
AC Characteristics
BAT60B...
Reverse current IR = (VR)A = Parameter
-10 10
-9 10
-8 10
-7 10
-6 10
-5 10
-4 10
-3 10 10
Forward current IF = (VF)A = Parameter
-5 10
-4 10
-3 10
-2 10
-1 10 10
Forward current IF = (TS)
500
1000
1500
2000
2500
3500
Permissible Puls Load RthJS = (tp)
10 0
-1 10 10 10 10
thJS
BAT60B...
Permissible Pulse LoadFmax/ IFDC = (tp)
10 0 10 10 10
Fmax
FDC
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