BAT54XV2 ,Schottky Barrier DiodeFeatures• Low Forward Voltage Drop• Flat Lead, Surface Mount Device at 0.60mm Height • Extremely Sm ..
BAT54XV2T1 ,Schottky Barrier DiodeMAXIMUM RATINGS (T = 125°C unless otherwise noted)JRating Symbol Value UnitReverse Voltage V 30 Vol ..
BAT60B ,Schottky DiodesCharacteristicsReverse current I µARV = 5 V - 5 15RV = 8 V - 10 25RV = 5 V, T = 80 °C - 100 800R ..
BAT60B E6327 , Silicon Schottky Diode
BAT60B E6327 , Silicon Schottky Diode
BAT60J ,SMALL SIGNAL SCHOTTKY DIODEFEATURES AND BENEFITS60A Kn VERY SMALL CONDUCTION LOSSESn NEGLIGIBLE SWITCHING LOSSESn LOW FORWARD ..
BD2051AFJ , Silicon monolithic integrated circuit USB high side switch IC
BD2065AFJ-E2 , High Side Switch ICs
BD226 , isc Silicon NPN Power Transistor
BD230 ,NPN power transistor
BD232 , isc Silicon NPN Power Transistor
BD232 , isc Silicon NPN Power Transistor
BAT54XV2
Schottky Barrier Diode
BAT54XV2 — Schottky Barrier Diodes January 2010 BAT54XV2 Schottky Barrier Diodes Features • Low Forward Voltage Drop • Flat Lead, Surface Mount Device at 0.60mm Height • Extremely Small Outline Plastic Package SOD523F Cathode Anode • Moisture Level Sensitivity 1 ELECTRICAL SYMBOL • Pb-free Version and RoHS Compliant • Matte Tin (Sn) Lead Finish SOD-523F • Green Mold Compound Band Indicates Cathode B A T5 4XV2 Marking : 5B Absolute Maximum Ratings * T =25°C unless otherwise noted A Symbol Parameter Value Units V Maximum Repetitive Reverse Voltage 30 V RRM V Maximum DC Blocking Voltage 30 V R I Average Rectified Forward Current 200 mA F(AV) I Peak Forward Surge Current 4 A FSM T Operating Junction Temperature +125 °C J T Storage Temperature Range -65 to +125 °C STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics T =25°C unless otherwise noted A Symbol Parameter Value Units P Power Dissipation 200 mW D R Thermal Resistance, Junction to Ambient 500 °C/W θJA * Device mounted on FR-4 PCB minimum land pad. Electrical Characteristics T =25°C unless otherwise noted A Symbol Parameter Test Condition Min. Typ. Max. Units 30 V BV Breakdown Voltage I =10μA R R 2 μA I Reverse Leakage Current V =25V R R V Forward Voltage I =0.1mA 0.24 F F I =1mA 0.32 F I =10mA 0.40 V F I =30mA 0.50 F I =100mA 0.80 F Reverse Recovery Time I =I =10mA 5nS T RR F R R =100Ω L I =1mA RR C Capacitance V =1V, f=1MHz 10 pF R © 2009 BAT54XV2 Rev. A1 1
