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BAT54WSCJN/a36000avaiSchottky Diodes


BAT54WS ,Schottky DiodesPreliminary Data Sheet PD-20633 12/01BAT54WSSCHOTTKY DIODE 0.2 Amp21Major Ratings and Character ..
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BAT54WS
Schottky Diodes
Preliminary Data Sheet PD-20633 12/01
International
Iean Rectifier
BAT54WS
SCHOTTKY DIODE
Major Ratings and Characteristics
Characteristics Value Units
IF (DC) 02 A
v 30 v
Description! Features
This Schottky barrierdiode is designed for high speed switching
application, voltage clamping and circuit protection.
RRM Miniature surface mount packages with reduced foot print are
excellent for portable application where space is limited
0.2 Amp
SOD323
G, @tp=10ms sine 1.0 A
. Small foot print, surface mountable
VF @30mADC,To=25oC 0.5 V o Verylowforwardvoltagedrop
Pd PowerDissipation 200 mW o Extremelyfastswitchingspeedforhighfrequencyoperation
@T =25''C . GLiarq_ring forenhanced ruggedness and longterm
A reliability
I, range -65to150 ''C
Case Styles
DeviceMarking: IRWS
SOLDERING PAD
”If 0.63 mm
l " " 0.025"
L' H ‘kkririririki I I
i I J83 mm
1 " 1. 0 mm P 0.033"
i 0.063"
2.85 mm
1 I 0,112"
Outline SOD323
DIM Millimeters Inches
Min Max Min Max
A 0.25 0.35 0.010 0.014
B 1.20 1.40 0.047 0.055
C 2.30 2.70 0.091 0106
H 1.60 1.80 0.063 0071
J - 0.10 - 0.004
K 1.10 1.35 0.043 0053
L 0.20 0.40 0.008 0.016
0.15 0.004 0.006
(A) 0+0 (K)

BAT54WS
Preliminary Data Sheet PD-20633 12101
International
IOR Rectifier
Voltage Ratings
Part number Value
v,, Max. DC Reverse Voltage (V) 30
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters Value Units Conditions
IF Forward Current 0.2 A DC
|FSM Max.PeakOneCycIeNon-Repetitive 8.4 A 5ps Sine or3ps Rect.pulse Following any rated
load condition and
SurgeCurrent,@TJ=25°C 1.0 A 10msSine or6ms Rect. pulse withrated VRRMapplied
Electrical Specifications
Parameters Value Units Conditions
Vo, Max. Forward Voltage Drop (1) 0.24 V © 0.1mA
0.32 V @ 1mA
Vo, Max. Forward Voltage Drop (1) 0.40 V @ 10mA
0.50 V @ 30mA T, = 25°C
0.65 V @ 100mA
Im, Max. Reverse Leakage (1) 2 pA @ VR = 25 V
Current 3 pA @ VR = 30 V
c, Max. Junction Capacitance 10 pF VR = 1VDc (test signal range 100KHz to 1Mhz), T J = 25°C
dv/dt Max. Voltage Rate of Change 10000 V/ps
(Rated VR)
(1) Pulse VWdth < 300ps, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters Value Units Conditions
T J Max.Junction Temperature Range(*) -65to150 ''C
Tstg Max.Storage Temperature Range -65 to 1 50 °C
Rtho-a) Max.ThermaIResistanceJunction 635 TAN Mounted on PC board FR4 with minimum pad size
toAmbient
Wt ApproximateWeight 0.004 gr
Case Style SOD323
Device Marking IRWS
(*)dPtot < 1
dn Rth(j-a)
thermal runaway condition for a diode on its own heatsink
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