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BAT54VV
Schottky barrier triple diode in ultra small SOT666 package
Product profile1.1 General descriptionPlanar Schottky barrier triple diode with an integrated guard ring for stress protection.
Three electrically isolated Schottky barrier diodes, encapsulated in a SOT666 ultra small
SMD plastic package.
1.2 Features Low forward voltage Ultra small SMD plastic package Low capacitance Flat leads: excellent coplanarity and improved thermal behavior
1.3 Applications Ultra high-speed switching Voltage clamping Line termination Inverse-polarity protection
1.4 Quick reference data Pinning information T54VV
Schottky barrier triple diode in ultra small SOT666 package
Rev. 02 — 15 January 2010 Product data sheet
Table 1. Quick reference data continuous reverse voltage - - 30 V continuous forward current - - 200 mA
Table 2. Pinning anode (diode 1) anode (diode 2) anode (diode 3) cathode (diode 3) cathode (diode 2) cathode (diode 1)
NXP Semiconductors BA T54VV
Schottky barrier triple diode in ultra small SOT666 package Ordering information Marking Limiting values[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Single diode loaded.
Thermal characteristics[1] Refer to SOT666 standard mounting conditions.
[2] Reflow soldering is the only recommended soldering method.
Table 3. Ordering informationBAT54VV - plastic surface mounted package; 6 leads SOT666
Table 4. Marking codesBAT54VV C6
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per diode continuous reverse voltage - 30 V continuous forward current - 200 mA
IFRM repetitive peak forward
current
tp ≤ 1 s; δ ≤ 0.5 - 300 mA
IFSM non-repetitive peak forward
current
tp < 10 ms - 600 mA
Ptot total power dissipation Tamb ≤ 25 °C [1][2] -170 mW junction temperature - 125 °C
Tamb ambient temperature −65 +125 °C
Tstg storage temperature −65 +150 °C
Table 6. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air [1][2] -- 590 K/W
NXP Semiconductors BA T54VV
Schottky barrier triple diode in ultra small SOT666 package Characteristics[1] Pulse test: tp≤ 300 μs; δ≤ 0.02.
Table 7. CharacteristicsTamb = 25 °C unless otherwise specified.
Per diode forward voltage see Figure1; [1]
IF = 0.1 mA - - 240 mV
IF = 1 mA --320 mV
IF = 10 mA - - 400 mV
IF = 30 mA - - 500 mV
IF = 100 mA - - 800 mV reverse current VR = 25 V; see Figure2 --2 μA diode capacitance VR = 1 V; f = 1 MHz;
see Figure3
--10 pF
NXP Semiconductors BA T54VV
Schottky barrier triple diode in ultra small SOT666 package
NXP Semiconductors BA T54VV
Schottky barrier triple diode in ultra small SOT666 package Package outlineNXP Semiconductors BA T54VV
Schottky barrier triple diode in ultra small SOT666 package Packing information[1] For further information and the availability of packing methods, see Section12.
Table 8. Packing methodsThe indicated -xxx are the last three digits of the 12NC ordering code.[1]
BAT54VV SOT666 4 mm pitch, 8 mm tape and reel -115
