BAT54SWT1G-- ,Schottky DiodesBAT54SWT1G/BAT54CWT1G Schottky DiodesApril 2005BAT54SWT1G/BAT54CWT1GSchottky DiodesConnection Diag ..
BAT54T ,Schottky Diodes
BAT54-T ,Schottky Diodes
BAT54T1G , 30 VOLT SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODES
BAT54TA , SOT23 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES
BAT54TCPT , SCHOTTKY DIODE VOLTAGE 30 Volts CURRENT 200 mAmperes
BD13910S ,NPN Epitaxial Silicon TransistorApplications Complement to BD136, BD138 and BD140 respectivelyTO-12611. Emitter 2.Collector ..
BD1396S ,NPN Epitaxial Silicon TransistorApplications Complement to BD136, BD138 and BD140 respectivelyTO-12611. Emitter 2.Collector ..
BD139G , Plastic Medium Power Silicon NPN Transistor
BD140 ,Leaded Power Transistor General PurposeMaximum ratings applied to the device are individual stress limit values(not normal operating condi ..
BD14010S ,PNP Epitaxial Silicon TransistorApplications Complement to BD135, BD137 and BD139 respectivelyTO-12611. Emitter 2.Collector ..
BD140-16S ,PNP Epitaxial Silicon TransistorBD136/138/140BD136/138/140Medium Power Linear and Switching
BAT54SWT1G-BAT54SWT1G--
Schottky Diodes
BAT54SWT1G/BAT54CWT1G Schottky Diodes April 2005 BAT54SWT1G/BAT54CWT1G Schottky Diodes Connection Diagram BAT54SWT1G BAT54CWT1G 3 3 3 12 1 2 2 1 MARKING SOT-323 BAT54SWT1G = YB BAT54CWT1G = YC Absolute Maximum Ratings * T = 25°C unless otherwise noted a Symbol Parameter Value Unit V Maximum Repetitive Reverse Voltage 30 V RRM I Average Rectified Forward Current 200 mA F(AV) I Non-repetitive Peak Forward Surge Current 600 mA FSM Pulse Width = 1.0 second T Storage Temperature Range -65 to +125 °C STG T Operating Junction Temperature -65 to +125 °C J * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Unit P Power Dissipation 232 mW D R Thermal Resistance, Junction to Ambient 430 °C/W θJA FR-4 board (3.0 × 4.5 × 0.062” by 1.0 × 0.5” land pads) Electrical Characteristics T = 25°C unless otherwise noted C Symbol Parameter Conditions Min. Max. Units V Breakdown Voltage I = 10µA30 V R R V Forward Voltage I = 0.1mA 240 mV F F I = 1mA 320 mV F I = 10mA 400 mV F I = 30mA 500 mV F I = 100mA 0.8 V F I Reverse Leakage V = 25V 2 µA R R C Total Capacitance V = 1V, f = 1.0MHz 10 pF T R t Reverse Recovery Time I = I = 10mA, I = 1.0mA, 5.0 ns rr F R RR R = 100Ω L ©2005 1 BAT54SWT1G/BAT54CWT1G Rev. A
