BAT54HT1G-- ,Small Signal Diodeapplications involving pulsed or low duty cycle operations.Thermal CharacteristicsSymbol Parameter ..
BAT54J ,SMALL SIGNAL SCHOTTKY DIODEFEATURES AND BENEFITSK2NCVERY SMALL CONDUCTION LOSSESKK AANEGLIGIBLESWITCHING LOSSES K2NCLOW FORWAR ..
BAT54KFILM ,Small Signal Schottky DiodeFeaturesBAT54ZFILM■ Low conduction and reverse losses(Single)■ Negligible switching lossesSOD-123■ ..
BAT54L ,SCHOTTKY BARRIER RECTIFIERS
BAT54LP-7 , SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
BAT54LT1 ,30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES3I , FORWARD CURRENT (mA)FC , TOATAL CAPACITANCE (pF)TI , REVERSE CURRENT (μA)RBAT54LT1INFORMATION ..
BCX71J ,Surface mount Si-Epitaxial PlanarTransistorsFEATURES PINNING• Low current (max. 100 mA)PIN DESCRIPTION• Low voltage (max. 45 V)1 base• Low nois ..
BCX71J ,Surface mount Si-Epitaxial PlanarTransistors
BCX71J ,Surface mount Si-Epitaxial PlanarTransistors
BCX71K ,SMD Small Signal Transistor PNP Low Noise
BCX71K ,SMD Small Signal Transistor PNP Low NoiseLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BCX71K ,SMD Small Signal Transistor PNP Low Noise
BAT54HT1G-BAT54HT1G--
Small Signal Diode
BAT54HT1G BAT54HT1G Connection Diagram 2 2 A2 1 SOD-323 1 Small Signal Diode Absolute Maximum Ratings * T = 25°C unless otherwise noted A Symbol Parameter Value Units V Maximum Repetitive Reverse Voltage 30 V RRM I Average Rectified Forward Current 200 mA F(AV) I Non-repetitive Peak Forward Surge Current FSM Pulse Width = 1.0 second 600 mA T Storage Temperature Range -65 to +150 °C STG T Operating Junction Temperature -55 to +150 °C J * These ratings are limiting values above which the serviceability of the diode may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 200 mW D R Thermal Resistance, Junction to Ambient 600 °C/W θJA Electrical Characteristics T =25°C unless otherwise noted A Symbol Parameter Test Conditions Min. Max. Units V Breakdown Voltage I = 10μA30 V R R V Forward Voltage I = 0.1mA 240 mV F F I = 1.0mA 320 mV F I = 10mA 400 mV F I = 30mA 500 mV F I = 100mA 0.8 V F I Reverse Leakage V = 25V 2.0 μA R R C Total Capacitance V = 1V, f = 1.0MHz 10 pF T R t Reverse Recovery Time I = I = 10mA, I = 1.0mA, 5.0 ns rr F R RR R = 100Ω L ©2004 BAT54HT1G, Rev. A
