BAT54CLT1 ,Small Signal Schottky2BAT54CLT1820 +10 V2 k0.1 FIFt t Tr pIF100 Ht T10%0.1 F rrDUT90%50 OUTPUT 50 INPUTi = 1 mAP ..
BAT54CPBF , Schottky Diode, 2 x 0.1 A
BAT54C-T , Ultra-small surface mount package Low forward voltage drop Fast switching
BAT54CT-7-F , SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAT54C-TP , 200mWatt, 30Volt Schottky Barrier Diode
BAT54CTT1G , Dual Series Schottky Barrier Diodes
BCX6825TA , 20V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89
BCX69 ,PNP Silicon AF TransistorCharacteristicsCollector-emitter breakdown voltage V 20 - - V(BR)CEOI = 30 mA, I = 0 C BCollector-b ..
BCX69 ,PNP Silicon AF Transistorapplications2• High collector current3• High current gain• Low collector-emitter saturation voltage ..
BCX69 ,PNP Silicon AF TransistorCharacteristics at T = 25°C, unless otherwise specified.AParameter Symbol Values Unitmin. typ. max.
BCX69-10 ,PNP Silicon AF Transistors (For general AF applications High collector current)
BCX69-10 ,PNP Silicon AF Transistors (For general AF applications High collector current)
BAT54CLT1
Small Signal Schottky
BAT54CL T1
Preferred DeviceDual Series Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand−held and portable applications where
space is limited.
Features Pb−Free Package is Available Extremely Fast Switching Speed Low Forward Voltage − 0.35 V olts (Typ) @ IF = 10 mAdc
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected. FR−4 @ Minimum Pad. FR−4 @ 1.0 x 1.0 inch Pad.
