BAT54C ,Schottky DiodesPreliminary Data Sheet PD-20760 12/01BAT54CSCHOTTKY DIODE 0.2 Amp32Major Ratings and Characteri ..
BAT54CDW , Low Forward Voltage Drop, Ultra-Small Surface Mount Package
BAT54CDW , Low Forward Voltage Drop, Ultra-Small Surface Mount Package
BAT54CDW , Low Forward Voltage Drop, Ultra-Small Surface Mount Package
BAT54CDW-7 , Surface Mount Schottky Barrier Diode Arrays
BAT54CDW-7-F , SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
BCX56-16 ,SMD Small Signal Transistor NPN High CurrentGeneral descriptionNPN medium power transistor series in Surface-Mounted Device (SMD) plastic packa ..
BCX56-16-- ,SMD Small Signal Transistor NPN High CurrentFeatures and benefits High current Three current gain selections High power dissipation capabili ..
BCX5616TA , NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89
BCX56-BH , SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS
BCX56TA , NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89
BCX58 ,NPN Silicon AF TransistorCharacteristicsat TA = 25 ˚C, unless otherwise specified.Parameter Symbol Values Unitmin. typ. max. ..
BAT54C
Schottky Diodes
Preliminary Data Sheet PD-20760 12/01
International
Titat, Rectifier BAT54C
SCHOTTKY DIODE
Major Ratings and Characteristics
Characteristics Value Units
IF (DC) PerLeg 0.2 A Description] Features
This Schottky barrierdiode is desig ned for high speed switching
V 30 V application, voltage clamping and circuit protection.
RRM Miniature surface mount packages with reduced foot print are
. excellent for portable application where space is limited
Ira, @i=10ms Sine 1.0 A
. Small foot print, surface mountable
VF @30mA DC'TJ=25 C 0.5 V o Verylowforward voltagedrop
Pd PowerDissipation 200 mW . Extremelyfastswitching speed forhighfrequency operation
@TA=25°C . Guard ring for enhanced ruggedness and long term
reliability
I, range - 65to150 'C
Case Styles
DeviceMarking: IR54C
DIM Millimeters Inches
Min Max Min Max
1 A 0.37 0.51 0.015 0.020
- 1 - B 1.20 1.40 0.047 0.055
c 2.30 2.50 0.091 0098
M1: L a D 0.89 1.03 0.035 0.041
F 0.45 0.60 0.018 0024
H 2.80 300 1.110 0.118
SOLDERING PAD J 0013 0.10 0.001 0.004
A 0037 mm K J89 1.10 0.035 1043
M 0.037 mm a OSS' L 0.45 0.61 0.018 0.024
m l W’ k M 0.09 0.18 0.003 0.007
1 W W A a 8° 8"
C B ___,_1_____ LJ LJ (K)
0.079 mm , 1
i 2.0" ——
U 2 I m 3 0.035 mm F7 +
i i 0.9" LJ
0.031 mm
m LT J) (A;
Outline SOT23
1
BAT54C
Preliminary Data Sheet PD-20760 12101
International
IOR Rectifier
Voltage Ratings
Part number Value
VR Max. DC Reverse Voltage (V) 30
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters Value Units Conditions
IF Forward Current 0.2 A DC,perLeg
|FSM Max.PeakOneCycIeNon-Repetitive 8.4 A 5ps Sine or3ps Rect.pulse Following t.Ty rated
load condition and
SurgeCurrent,@TJ=25°C 1.0 A 10msSine or6ms Rect. pulse with rated VRRMapplied
Electrical Specifications
Parameters Value Units Conditions
VFM Max. Forward Voltage Drop (1) 0.24 V © 0.1 mA
0.32 v @ 1mA
VFM Max. Forward Voltage Drop (1) 0.40 V @ 10mA
0.50 V @ 30mA I, = 25°C
0.65 v @100mA
IRM Max. Reverse Leakage (1) 2 pA VR = 25V
Current 3 pA VR = 30V
c, Max. Junction Capacitance 10 pF v,, = 1VDC (test signal range 100KHz to 1Mhz), T J = 25°C
dv/dt Max. Voltage Rate of Change 10000 V/ps
(Rated I/e)
(1) Pulse 1/1hdth < 300ps, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters Value Units Conditions
T J Max.Junction Temperature Range(*) -65to150 "C
Tstg Max.Storage Temperature Range -65 to 1 50 "C
Rtho-a) Max.ThermaIResistanoeJunction 500 TAN Mounted on PC board FR4 with minimum pad size
toAmbient
Wt ApproximateWeight 0.008 gr
Case Style SOT23
Device Marking IR54C
(*) dPtot < 1
d1] Rth(j-a)
thermal runaway condition fora diode on its own heatsink
