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BAT54AWDIODESN/a5660avaiSurface Mount Schottky Diode
BAT54JSTN/a169avaiSMALL SIGNAL SCHOTTKY DIODE


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BAT54AW-BAT54J
SMALL SIGNAL SCHOTTKY DIODE
BAT54J/ W/ AW/ CW/ SW
June 1999-Ed:2A
SMALL SIGNAL SCHOTTKY DIODE
VERYSMALL CONDUCTION LOSSES
NEGLIGIBLESWITCHING LOSSES
LOW FORWARD VOLTAGE DROP
SURFACE MOUNT DEVICE
FEATURES AND BENEFITS

Schottky barrier diodes encapsulated eitherin
SOT-323or SOD-323small SMD packages.
Single and double diodes with different piningare
available.
DESCRIPTIONA
Symbol Parameter Value Unit

VRRM Repetitive peak reversevoltage 30 V Continuousforward current 0.3 A
IFSM Surge non repetitive forward current tp=10mssinusoidal 1 A
Ptot Power dissipation (note1)
Tamb= 25°C
SOD-323 230 mW
SOT-323
Tstg Maximum storage temperaturerange -65to +150 °C Maximum operating junction temperature* 150 °C Maximum temperaturefor soldering during10s 260 °C
Note1:
fordouble diodes, Ptotisthetotal dissipationof bothdiodes
ABSOLUTE RATINGS
(limiting values)
BAT54W K
BAT54CW A2K2
BAT54SW
dPtot
dTj< 1
Rth(j−a) thermal runawayconditionfora diodeonits own heatsink A
BAT54AW
BAT54J
86
SOT-323
SOD-323

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Symbol Parameters Tests conditions Min. Typ. Max. Unit
VF* Forward voltagedrop Tj= 25°CIF= 0.1mA 240 mV=1mA 320=10mA 400=30mA 500= 100mA 900** Reverse leakage current Tj= 25°CVR =30V 1 μA= 100°C 100
Pulsetest:*tp=380μs,δ <2%tp=5ms,δ <2%
STATIC ELECTRICAL CHARACTERISTICS
(per diode)
Symbol Parameters Tests conditions Min. Typ. Max. Unit
Junction
capacitance
Tj=25°CVR=1VF=1 MHz 10 pF
trr Reverse recovery
time =10mAIR =10mATj= 25°C
Irr=1mA RL= 100Ω
5ns
DYNAMIC CHARACTERISTICS
(Tj=25°C)
Symbol Parameters Value Unit

Rth(j-a) Junctionto ambient(*) SOD-323 550 °C/W
SOT-323 °C/W
(*) Mountedon epoxy board, with recommendedpad layout.
THERMAL RESISTANCE

0.000.05 0.100.150.200.250.300.350.400.450.500.00E+0
2.00E-3
4.00E-3
6.00E-3
8.00E-3
1.00E-2
1.20E-2
1.40E-2
1.60E-2
1.80E-2
2.00E-2
VFM(V)
IFM(A)

Tj=100°C
Tj=50°C
Tj=25°C
Fig. 1-1:
Forward voltage drop versus forward
current(typical values,low level).
0.00.10.20.30.40.50.60.70.80.91.01.11E-3
1E-2
1E-1
5E-1
VFM(V)
IFM(A)

Tj=100°C
Tj=50°C
Tj=25°C
Fig. 1-2:
Forward voltage drop versus forward
current (typical values, high level).
BAT54J/W/ AW/ CW/ SW

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5 10 15 20 25 30 35 40 45 50300S(Cu) (mm )
Rth(j-a) (°C/W)
P=0.2W
Fig.6:
Thermal resistance junctionto ambient
versus copper surface under each lead (Epoxy
printedcircuit board FR4, copperthickness: 35μm.) 5 10 15 20 25 301E-2
1E-1
1E+0
1E+1
1E+2
VR(V)
IR(μA)

Tj=50°C
Tj=25°C
Tj=100°C
Fig.2:
Reverse leakage current versus reverse
voltage applied (typicalvalues). 25 50 75 100 125 1501E-2
1E-1
1E+0
1E+1
1E+2
1E+3
1E+4
Tj(°C)
IR(μA)

VR=30V
Fig.3:
Reverse leakage current versus junction
temperature. 5 10 20 301
VR(V)
C(pF)

F=1MHz
Tj=25°C
Fig.4:
Junction capacitance versus reverse
voltage applied (typical values).
1E-3 1E-2 1E-1 1E+0 1E+1 1E+20.01
tp(s)
Zth(j-a)/Rth(j-a)
Singlepulse
δ=0.10.20.5
δ=tp/T tp
Fig.5:
Relative variationof thermal impedance
junctionto ambient versus pulse duration (epoxy
FR4 with recommendedpad layout, e(Cu)=35μm)
BAT54J/W/ AW/ CW/ SW

3/5
PACKAGE MECHANICAL DATA
SOT-323
REF.
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
0.8 1.1 0.031 0.043 0.0 0.1 0.0 0.004 0.25 0.4 0.010 0.016 0.1 0.26 0.004 0.010 1.8 2.0 2.2 0.071 0.079 0.086 1.15 1.25 1.35 0.045 0.049 0.053 0.65 0.026 1.8 2.1 2.4 0.071 0.083 0.094 0.1 0.2 0.3 0.004 0.008 0.012 030° 030°
BAT54J/W/ AW/ CW/ SW

4/5
PACKAGE MECHANICAL DATA
SOD-323c
REF.
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
1.17 0.046 0 0.1 0 0.004 0.25 0.44 0.01 0.017 0.1 0.25 0.004 0.01 1.52 1.8 0.06 0.071 1.11 1.45 0.044 0.057 2.3 2.7 0.09 0.106 0.1 0.46 0.004 0.02 0.1 0.41 0.004 0.016
Orderingtype Marking Package Weight Baseqty Delivery mode

BAT54W D73 SOT-323 0.006g 3000 Tape& reel
BAT54AW D74 SOT-323 0.006g 3000 Tape& reel
BAT54CW D77 SOT-323 0.006g 3000 Tape& reel
BAT54SW D78 SOT-323 0.006g 3000 Tape& reel
BAT54J 86 SOD-323 0.005g 3000 Tape& reel
Epoxy meetsUL94,V0
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BAT54J/W/ AW/ CW/ SW

5/5
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