BAS79B ,Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode)characteristicsBreakdown voltage V V(BR)I = 100 µA 50 - -BAS79A(BR)100 - -BAS79B200 - -BAS79C400 ..
BAS79D ,Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode)applications4
BAS79-BAS79B-BAS79D
Silicon Switching Diodes
BAS79A...BAS79D
Silicon Switching Diodes Switching applications High breakdown voltage Common cathode
2, 4
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
BAS79A...BAS79D
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC characteristics
AC characteristics
Test circuit for reverse recovery timeDUT
90%
10%tr
Oscillograph
Pulse generator: tp = 10µs, D = 0.05,
tr = 0.6ns, Ri = 50
Oscillograph: R = 50, tr = 0.35ns,
C 1pF
BAS79A...BAS79D
Forward current IEHB00050F210
Forward current IF = f (TS)100
200
300
400
500
600
700
800
900
1000
1200
Reverse current IR = f (TA)R = VR1
This datasheet has been downloaded from:
www.ic-phoenix.com
Datasheets for electronic components.