BAS70-08S ,RF DETECTION DIODEFEATURES AND BENEFITSn LOW DIODE CAPACITANCEn LOW SERIES INDUCTANCE AND RESISTANCEn SURFACE MOUNT P ..
BAS70-08SFILM ,RF DETECTION DIODEFEATURES AND BENEFITSn LOW DIODE CAPACITANCEn LOW SERIES INDUCTANCE AND RESISTANCEn SURFACE MOUNT P ..
BAS70BRW-7-F , SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
BAS70C ,Top Electronics - SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAS70DW-04 , SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
BAS70FILM , Low capacitance, low series inductance and resistance Schottky diodes
BCW33 ,NPN general purpose transistorsFEATURES PINNING• Low current (100 mA)PIN DESCRIPTION• Low voltage (32 V).1 base2 emitter
BCW33 ,NPN general purpose transistors
BCW33 ,NPN general purpose transistors
BCW33 ,NPN general purpose transistors
BCW60 ,Surface mount Si-Epitaxial PlanarTransistors
BCW60A ,NPN EPITAXIAL SILICON TRANSISTORRev. 1.2, 19-Aug-04 31.43 (.056)1.20(.047)1.15 (.045)0.95 (.037)BCW60 SeriesVISHAYVishay Semiconduc ..
BAS70-08S
Schottky barrier double diode
BAS70-07S / BAS70-08SDecember 2001-Ed:2A
RF DETECTION DIODE LOW DIODE CAPACITANCE LOW SERIES INDUCTANCE AND RESISTANCE SURFACE MOUNT PACKAGE
FEATURES AND BENEFITSDual and Triple Schottky diodein SOT323-6L
package. This diodeis intentedtobe usedinRF
applicationfor signal detection and temperature
compensation.
DESCRIPTION
ABSOLUTE RATINGS (limiting values)
BAS70-07S SCHEMATIC DIAGRAM
BAS70-08S SCHEMATIC DIAGRAM
BAS70-07S / BAS70-08S
STATIC ELECTRICAL CHARACTERISTICS(Tj= 25°C otherwise specified)
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCE
BAS70-07S / BAS70-08S
1.E-01
1.E+00
1.E+01
1.E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IFM(mA)
Fig.1: Forward voltage drop versus forward
current (typical values).
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02 1020 3040 5060 70
IR(μA)
Fig.2: Reverse leakage current versus reverse
voltage applied (typical values).
0.1 1.0 10.0
Rf()Ω
Fig.3: Differential forward resistance versus
forward current (typical values).
1.5 102030 40506070
C(pF)
Fig.4: Junction capacitance versus reverse
voltage applied (typical values).
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02
Zth(j-a)(°C/W)
Fig.5: Variationof thermal impedance junctionto
ambient versus pulse duration (printed circuit
board, epoxy FR4).
600 5 10 15 20 25 30 35 40 45 50
Rth(j-a)
Fig.6: Thermal resistance junctionto ambient
versus copper surface under each lead (printed
circuit board, epoxy FR4).
BAS70-07S / BAS70-08SInformationfurnishedis believedtobeaccurateand reliable.However, STMicroelectronics assumesno responsibilityforthe consequencesof
useof suchinformation norfor anyinfringementof patentsorotherrightsofthird partieswhichmay result fromitsuse. Nolicenseis grantedby
implicationor otherwise underany patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
change withoutnotice.Thispublication supersedesand replacesall information previouslysupplied.
STMicroelectronics productsarenot authorizedforuseas critical componentsinlife support devicesor systems without express writtenap-
provalof STMicroelectronics.
TheST logoisa registered trademarkof STMicroelectronics 2001 STMicroelectronics- PrintedinItaly-All rights reserved.
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http://
PACKAGE MECHANICAL DATASOT323-6L
FOOTPRINT DIMENSIONS (millimeters) Epoxy meets UL94,V0
MARKING
:
www.ic-phoenix.com
.
