Home ›  B › B6 > BAS70-06W-BAS70W,Schottky Diodes

BAS70-06W-BAS70W Fast Delivery,Good Price
Part Number:

If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email

Partno	Mfg	Dc	Qty	Available	Descript
BAS70-06W |BAS7006W	ST	N/a	9000	avai	Schottky Diodes
BAS70W	ST	N/a	5890	avai	Schottky barrier (double) diodes

BAS70-06W ,Schottky DiodesFEATURES AND BENEFITSK2NCn VERY SMALL CONDUCTION LOSSESKAKAn NEGLIGIBLE SWITCHING LOSSES K2NCn LOW ..
BAS70-06W ,Schottky DiodesAPPLICATIONSFig.3 BAS70-04W diodehandbook, 2 columns3 configuration (symbol).• Ultra high-speed swi ..
BAS70-06W ,Schottky DiodesCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BAS70-06WFILM ,SMALL SIGNAL SCHOTTKY DIODEBAS70J / BAS70WBAS70-04W /BAS70-05W / BAS70-06W®SMALL SIGNAL SCHOTTKY DIODE
BAS70-07 ,SMALL SIGNAL SCHOTTKY DIODEGeneral descriptionGeneral-purpose Schottky diodes in small Surface-Mounted Device (SMD) plastic pa ..
BAS70-07S ,Schottky barrier double diodeFeatures „ High switching speed„ Low leakage current„ High breakdown voltage„ Low capacitance1.3
BCW31 ,SMD Small Signal Transistor NPN Low NoiseLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BCW32 ,Surface mount Si-Epitaxial PlanarTransistorsLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BCW32LT1 ,General Purpose TransistorsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
BCW33 ,NPN general purpose transistors
BCW33 ,NPN general purpose transistorsFEATURES PINNING• Low current (100 mA)PIN DESCRIPTION• Low voltage (32 V).1 base2 emitter
BCW33 ,NPN general purpose transistors

---

BAS70-06W-BAS70W
Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping)
BAS70J/ BAS70W
BAS70-04W /BAS70-05W/ BAS70-06W
May 2000-Ed:4B
SMALL SIGNAL SCHOTTKY DIODE VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP SURFACE MOUNT DEVICE
FEATURES AND BENEFITS
Schottky barrier diodes encapsulated eitherin
SOT-323or SOD-323 small SMD packages.
Single and double diodes with different piningare
available.
DESCRIPTIONA
Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 70 V Continuous forward current 70 mA
IFSM Surge non repetitive forward current tp=10ms 1 A
Ptot Power dissipation (note1)
Tamb= 25°C
SOD-323 230 mW
SOT-323
Tstg Maximum storage temperature range -65to +150 °C Maximum operating junction temperature* 150 °C Maximum temperaturefor soldering during 10s 260 °C
Note 1:for double diodes,Ptot isthetotal dissipationofboth diodes.
ABSOLUTE RATINGS (limiting values)
BAS70W
BAS70-05W A2K2
BAS70-04W dPtot
dTj Rthja< − thermal runaway conditionfora diodeonits own heatsink A
BAS70-06W
BAS70J K76
SOT-323
SOD-323
BAS70J/ BAS70W/ BAS70-04W/ BAS70-05W/ BAS70-06W
Symbol Test Conditions Min. Typ. Max. Unit
VBR Tj= 25°CIR =10μA70 V *Tj= 25°CIF= 1mA 410 mV** Tj= 25°CVR= 50V 100 nA
Pulse test:*tp= 380μs,δ <2%tp=5ms,δ <2%
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Test Conditions Min. Typ. Max. Unit
CTj= 25°CVR =0V= 1MHz
2pF
τ*Tj= 25°CIF= 5mA
Krakauer Method
100 ps Effective carrierlifetime.
DYNAMIC CHARACTERISTICS
Symbol Parameters Value Unit
Rth(j-a) Junctionto ambient(*) SOD-323 550 °C/W
SOT-323 °C/W
(*) Mountedon epoxy board,with recommendedpad layout.
THERMAL RESISTANCE
BAS70J/ BAS70W/ BAS70-04W/BAS70-05W/ BAS70-06W
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.01E-4
1E-3
1E-2
7E-2
VFM(V)
IFM(A)
Tj=100°C
Typicalvalues
Tj=25°C
Maximumvalues
Tj=25°C
Typicalvalues
Fig.1: Forward voltage drop versus forward
current.5101520253035404550556065701E-3
1E-2
1E-1
1E+0
1E+1
VR(V)
IR(μA)
Tj=25°C
Tj=100°C
Fig.2: Reverse leakage current versus reverse
voltage applied (typical values). 25 50 75 100 125 1501E-2
1E-1
1E+0
1E+1
1E+2
5E+2
Tj(°C)
IR(μA)
VR=70V
Fig.3: Reverse leakage current versus junction
temperature (typical values). 10 1000.1
VR(V)
C(pF)
F=1MHz
Tj=25°C
Fig.4: Junction capacitance versus reverse
voltage applied (typical values).
1E-3 1E-2 1E-1 1E+0 1E+1 1E+20.01
tp(s)
Zth(j-a)/Rth(j-a)
Singlepulse0.1
δ=0.20.5
δ=tp/T tp
Fig.5: Relative variationof thermal impedance
junctionto ambient versus pulse duration (epoxy
FR4 with recommended pad layout,
S(Cu)=35μm). 5 10 15 20 25 30 35 40 45 50300
S(Cu) (mm )
Rth(j-a) (°C/W)
P=0.2W
Fig.6: Thermal resistance junctionto ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness:
35μm).
BAS70J/ BAS70W/ BAS70-04W/ BAS70-05W/ BAS70-06W
PACKAGE MECHANICAL DATA
SOT-323
REF.
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max. 0.8 1.1 0.031 0.043 0.0 0.1 0.0 0.004 0.25 0.4 0.010 0.016 0.1 0.26 0.004 0.010 1.8 2.0 2.2 0.071 0.079 0.086 1.15 1.25 1.35 0.045 0.049 0.053 0.65 0.026 1.8 2.1 2.4 0.071 0.083 0.094 0.1 0.2 0.3 0.004 0.008 0.012 030° 030°
BAS70J/ BAS70W/ BAS70-04W/BAS70-05W/ BAS70-06W
PACKAGE MECHANICAL DATA
SOD-323c
REF.
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max. 1.17 0.046 0 0.1 0 0.004 0.25 0.44 0.01 0.017 0.1 0.25 0.004 0.01 1.52 1.8 0.06 0.071 1.11 1.45 0.044 0.057 2.3 2.7 0.09 0.106 0.1 0.46 0.004 0.02 0.1 0.41 0.004 0.016
Ordering type Marking Package Weight Baseqty Delivery mode
BAS70W D28 SOT-323 0.006g 3000 Tape& reel
BAS70-04W D31 SOT-323 0.006g 3000 Tape& reel
BAS70-05W D30 SOT-323 0.006g 3000 Tape& reel
BAS70-06W D29 SOT-323 0.006g 3000 Tape& reel
BAS70J 76 SOD-323 0.005g 3000 Tape& reel Epoxy meets UL94,V0
Information furnishedisbelieved tobeaccurate andreliable. However, STMicroelectronicsassumesno responsibility forthe consequencesof
use ofsuch information norforany infringement ofpatentsor otherrightsofthird partieswhich mayresult fromits use.Nolicense isgrantedby
implicationor otherwise under anypatentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
change without notice.This publicationsupersedes andreplacesall information previously supplied.
STMicroelectronics productsare notauthorizedfor useas critical componentsinlife support devicesor systems without express writtenap-
provalof STMicroelectronics.
TheST logoisa registered trademarkof STMicroelectronics 2000 STMicroelectronics- PrintedinItaly-All rights reserved.
STMicroelectronics GROUPOF COMPANIES
Australia- Brazil- China- Finland- France- Germany- Hong Kong- India-Italy- Japan- Malaysia
Malta- Morocco- Singapore- Spain- Sweden- Switzerland- United Kingdom- U.S.A.
http://
This datasheet has been :
www.ic-phoenix.com
Datasheets for electronic components.

TEL:86-533-2716050      FAX:86-533-2716790     ©2020 IC PHOENIX CO.,LIMITED