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BAS70-04WFILM-BAS70-05WFILM-BAS70-06WFILM
SMALL SIGNAL SCHOTTKY DIODE
BAS70J / BAS70W
BAS70-04W /BAS70-05W / BAS70-06WMay 2000-Ed:4B
SMALL SIGNAL SCHOTTKY DIODE VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP SURFACE MOUNT DEVICE
FEATURES AND BENEFITSSchottky barrier diodes encapsulated eitherin
SOT-323or SOD-323 small SMD packages.
Single and double diodes with different piningare
available.
DESCRIPTION
Note1: fordouble diodes,Ptot isthetotal dissipationofboth diodes.
ABSOLUTE RATINGS (limiting values) dPtot
dTj Rthja< − thermal runaway conditionfora diodeonits own heatsink
BAS70J / BAS70W / BAS70-04W / BAS70-05W / BAS70-06WPulsetest:*tp= 380μs,δ <2%tp=5ms,δ <2%
STATIC ELECTRICAL CHARACTERISTICS (per diode) Effective carrierlifetime.
DYNAMIC CHARACTERISTICS(*) Mountedon epoxy board,with recommendedpad layout.
THERMAL RESISTANCE
BAS70J / BAS70W / BAS70-04W /BAS70-05W / BAS70-06W0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.01E-4
1E-3
1E-2
7E-2
IFM(A)
Fig.1: Forward voltage drop versus forward
current.5101520253035404550556065701E-3
1E-2
1E-1
1E+0
1E+1
IR(μA)
Fig.2: Reverse leakage current versus reverse
voltage applied (typical values). 25 50 75 100 125 1501E-2
1E-1
1E+0
1E+1
1E+2
5E+2
IR(μA)
Fig.3: Reverse leakage current versus junction
temperature (typical values). 10 1000.1
C(pF)
Fig.4: Junction capacitance versus reverse
voltage applied (typical values).
1E-3 1E-2 1E-1 1E+0 1E+1 1E+20.01
Zth(j-a)/Rth(j-a)
Fig.5: Relative variationof thermal impedance
junctionto ambient versus pulse duration (epoxy
FR4 with recommended pad layout,
S(Cu)=35μm). 5 10 15 20 25 30 35 40 45 50300
Rth(j-a) (°C/W)
Fig.6: Thermal resistance junctionto ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness:
35μm).
BAS70J / BAS70W / BAS70-04W / BAS70-05W / BAS70-06W
PACKAGE MECHANICAL DATASOT-323
BAS70J / BAS70W / BAS70-04W /BAS70-05W / BAS70-06W
PACKAGE MECHANICAL DATASOD-323 Epoxy meets UL94,V0
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