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BAS416
Low-leakage diode
NXP Semiconductors Product data sheet
Low-leakage diode BAS416
FEATURES Plastic SMD package Low leakage current: typ. 3 pA Switching time: typ. 0.8 µs Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 85 V Repetitive peak forward current: max. 500 mA.
APPLICATIONS Low-leakage current applications in surface mounted
circuits.
DESCRIPTIONEpitaxial, medium-speed switching diode with a low
leakage current encapsulated in a small SOD323 SMD
plastic package.
PINNING
ORDERING INFORMATION
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Note Device mounted on an FR4 printed-circuit board.
NXP Semiconductors Product data sheet
Low-leakage diode BAS416
CHARACTERISTICSTamb = 25 °C unless otherwise specified.
THERMAL CHARACTERISTICS
Note Refer to SOD323 (SC-76) standard mounting conditions.
NXP Semiconductors Product data sheet
Low-leakage diode BAS416
NXP Semiconductors Product data sheet
Low-leakage diode BAS416
NXP Semiconductors Product data sheet
Low-leakage diode BAS416
PACKAGE OUTLINE
