BAS40SL ,Schottky Barrier DiodeFeatures• Low Forward Voltage Drop• Fast switching• Very Small and Thin SMD package• Profile height ..
BAS40SW ,Top Electronics - SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAS40T , Low Forward Voltage Drop, Ultra-Small Surface Mount Package
BAS40T-7-F , SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAS40TW , SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
BAS40TW-7-F , SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
BCV26 ,PNP Darlington transistorsLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BCV27 ,Darlington TransistorsDISCRETE SEMICONDUCTORSDATA SHEETok, halfpageM3D088BCV27; BCV47NPN Darlington transistors1999 Apr 0 ..
BCV28 ,PNP Silicon Darlington Transistors (For general AF applications High collector current)applications2
BAS40SL
Schottky Barrier Diode
BAS40SL — Schottky Barrier Diodes October 2010 BAS40SL Schottky Barrier Diodes Features • Low Forward Voltage Drop • Fast switching • Very Small and Thin SMD package • Profile height, 0.43mm max • Footprint, 1.0 x 0.6mm Connection Diagram 1 2 2 1 SOD-923F Marking: AA Absolute Maximum Ratings * T = 25°C unless otherwise noted A Symbol Parameter Value Unit V Maximum Repetitive Reverse Voltage 40 V RRM I Average Rectified Forward Current 100 mA F(AV) I Forward Surge Current 600 mA FSM (8.3mS Single Half Sine-Wave) P Power Dissipation 227 mW D T T Operating Junction & Storage Temperature Range -55 to +150 °C J, STG * These ratings are limiting values above which the serviceability of the diode may be impaired. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Parameter Value Unit R Thermal Resistance, Junction to Ambient * 550 °C/W θJA * Minimum land pad. Electrical Characteristics T = 25°C unless otherwise noted A Symbol Parameter Test Conditions Min. Max. Unit V Breakdown Voltage I = 10μA40 V R R V Forward Voltage I = 1mA 380 mV F F I = 40mA 1000 mV F I Reverse Leakage V = 30V 0.2 μA R R trr Reverse Recovery Time I = I = 10mA, irr = 0.1I 8.0 nS F R R C Junction Capacitance V = 0, f = 1.0MHz 5.0 pF j R © 2010 BAS40SL Rev. A2 1
