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Partno	Mfg	Dc	Qty	Available	Descript
BAS29	NXP	N/a	3000	avai	General purpose controlled avalanche (double) diodes
BAS31	NXP/PHILIPS	N/a	3000	avai	Small Signal Diode
BAS35	NXP	N/a	3000	avai	SURFACE MOUNT SWITCHING DIODES

BAS31 ,Small Signal Diode
BAS31 ,Small Signal DiodeBAS31BAS31Connection Diagram333L21212112SOT-23Small Signal DiodeAbsolute Maximum Ratings* T = ..
BAS31 ,Small Signal DiodeFEATURES PINNING• Small plastic SMD packageDESCRIPTIONPIN• Switching speed: max. 50 nsBAS29 BAS31 B ..
BAS316 ,SWITCHING DIODESFeaturesn High switching speed: t ≤4ns n Low capacitancerrn Low leakage current n Reverse voltage: ..
BAS316-- ,SWITCHING DIODESBAS16 seriesHigh-speed switching diodesRev. 05 — 25 August 2008 Product data sheet1. Product proﬁle ..
BAS321 ,General purpose diodeLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BCR512 ,Digital TransistorsBCR512NPN Silicon Digital Transistor 3

BAS29-BAS31-BAS35
General purpose controlled avalanche (double) diodes

NXP Semiconductors Product data sheet
General purpose controlled avalanche
(double) diodes BAS29; BAS31; BAS35
FEATURES Small plastic SMD package Switching speed: max. 50 ns General application Continuous reverse voltage: max. 90 V Repetitive peak reverse voltage: max. 110 V Repetitive peak forward current: max. 600 mA Repetitive peak reverse current: max. 600 mA.
APPLICATIONS General purpose switching in e.g. surface mounted
circuits.
DESCRIPTION
General purpose switching diodes fabricated in planar
technology, and encapsulated in small rectangular plastic
SMD SOT23 packages. The BAS29 consists of a single
diode. The BAS31 has two diodes in series. The BAS35
has two diodes with a common anode.
MARKING
Note ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
∗ = W : Made in China.
NXP Semiconductors Product data sheet
General purpose controlled avalanche
(double) diodes BAS29; BAS31; BAS35
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note Device mounted on an FR4 printed-circuit board.
NXP Semiconductors Product data sheet
General purpose controlled avalanche
(double) diodes BAS29; BAS31; BAS35
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
THERMAL CHARACTERISTICS
Note Device mounted on an FR4 printed-circuit board.
NXP Semiconductors Product data sheet
General purpose controlled avalanche
(double) diodes BAS29; BAS31; BAS35
NXP Semiconductors Product data sheet
General purpose controlled avalanche
(double) diodes BAS29; BAS31; BAS35

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