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BAS21SW-BAS21W
High-voltage switching diodes
Product profile1.1 General descriptionHigh-voltage switching diodes, encapsulated in a very small Surface-Mounted
Device (SMD) plastic package.
1.2 Features
1.3 Applications
1.4 Quick reference data[1] Single diode loaded.
[2] When switched from IF=10 mA to IR=10 mA; RL= 100 Ω; measured at IR=1 mA.
BAS21W series
High-voltage switching diodes
Rev. 01 — 9 October 2009 Product data sheet
Table 1. Product overviewBAS21W single SOT323 SC-70 very small
BAS21AW dual common anode
BAS21SW dual series High switching speed: trr≤50ns n Low capacitance: Cd≤ 2pF Low leakage current n Very small SMD plastic package High reverse voltage: VR≤ 250V n AEC-Q101 qualified High-speed switching n Voltage clamping General-purpose switching n Reverse polarity protection
Table 2. Quick reference data
Per diode forward current [1]- - 225 mA reverse current VR= 200V - - 100 nA reverse voltage - - 250 V
trr reverse recovery time [2] --50 ns
NXP Semiconductors BAS21W series
High-voltage switching diodes Pinning information Ordering information
Table 3. Pinning
BAS21W anode not connected cathode
BAS21AW cathode (diode1) cathode (diode2) common anode
BAS21SW anode (diode1) cathode (diode2) cathode (diode1),
anode (diode2)
006aaa764
006aab099
006aaa763
Table 4. Ordering informationBAS21W SC-70 plastic surface-mounted package; 3 leads SOT323
BAS21AW
BAS21SW
NXP Semiconductors BAS21W series
High-voltage switching diodes Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Limiting values[1] Single diode loaded.
[2] Double diode loaded.
[3] Tj =25 °C prior to surge.
[4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Table 5. Marking codesBAS21W X4*
BAS21AW X6*
BAS21SW X5*
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per diode reverse voltage - 250 V forward current [1]- 225 mA
[2]- 125 mA
IFRM repetitive peak forward
current 625 mA
IFSM non-repetitive peak forward
current
square wave [3] =1 μs- 9 A= 100 μs- 3 A =10ms - 1.7 A
Per devicePtot total power dissipation Tamb≤25°C [4]- 200 mW junction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
NXP Semiconductors BAS21W series
High-voltage switching diodes Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Characteristics[1] When switched from IF=10 mA to IR=10 mA; RL= 100 Ω; measured at IR=1 mA.
Table 7. Thermal characteristics
Per deviceRth(j-a) thermal resistance from
junction to ambient
in free air [1]- - 625 K/W
Rth(j-sp) thermal resistance from
junction to solder point - 300 K/W
Table 8. CharacteristicsTamb =25 °C unless otherwise specified.
Per diode forward voltage IF= 100 mA - - 1.0 V= 200 mA - - 1.25 V reverse current VR= 200V - - 100 nA= 200 V; Tj= 150°C - - 100 μA diode capacitance f=1 MHz; VR =0V - - 2 pF
trr reverse recovery time [1] --50 ns
NXP Semiconductors BAS21W series
High-voltage switching diodes
NXP Semiconductors BAS21W series
High-voltage switching diodes Test information
8.1 Quality informationThis product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
