BAS21H ,Single high-voltage switching diodeApplicationsn General-purpose switching1.4 Quick reference dataTable 1. Quick reference dataSymbol ..
BAS21LT1 ,CASE 318 08, STYLE 8 SOT 23 (TO 236AB)THERMAL CHARACTERISTICS (SOT−23)Characteristic Symbol Max UnitTotal Device Dissipation FR−5 Board P ..
BAS21LT3 ,High Voltage Switching Diode• BAS19LT1 = JP• BAS20LT1 = JRHIGH VOLTAGE• BAS21LT1 = JSSWITCHING DIODE• BAS21DW5T1 = JSSOT−23
BAS21S ,Conductor Holdings Limited - Surface mount switching diode
BAS21S ,Conductor Holdings Limited - Surface mount switching diode
BAS21SLT1 ,Dual Series High Voltage Switching Diode2FORWARD VOLTAGE (mV)REVERSE CURRENT (nA)BAS21SLT1PACKAGE DIMENSIONSSOT−23 (TO−236)CASE 318−09ISSUE ..
BCR2PM , LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR2PM-12 , Triac Low Power Use
BCR30AM , MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR30AM , MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR30AM-12L , Triac 30 Ampere/400-600 Volts
BCR30AM-12L , Triac 30 Ampere/400-600 Volts
BAS21H
Single high-voltage switching diode
Product profile1.1 General descriptionSingle high-voltage switching diode, encapsulated in a SOD123F small and flat lead
Surface-Mounted Device (SMD) plastic package.
1.2 Features Small and flat lead SMD plastic package Reverse voltage: VR≤ 200V
1.3 Applications General-purpose switching
1.4 Quick reference data[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
[2] When switched from IF=30 mA to IR=30 mA; RL= 100 Ω; measured at IR=3 mA.
BAS21H
Single high-voltage switching diode
Rev. 02 — 3 November Product data sheet
Table 1. Quick reference data forward current [1]- - 200 mA reverse voltage - - 200 V
trr reverse recovery time [2] --50 ns
NXP Semiconductors BAS21H
Single high-voltage switching diode Pinning information[1] The marking bar indicates the cathode.
Ordering information Marking
Table 2. Pinning cathode [1] anode
sym001
Table 3. Ordering informationBAS21H - plastic surface-mounted package; 2 leads SOD123F
Table 4. Marking codesBAS21H B2
NXP Semiconductors BAS21H
Single high-voltage switching diode Limiting values[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
[2] Tj =25 °C prior to surge.
[3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Soldering point of cathode tab.
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VRRM repetitive peak reverse
voltage 250 V reverse voltage - 200 V forward current [1]- 200 mA
IFRM repetitive peak forward
current=1 ms;= 0.25 625 mA
IFSM non-repetitive peak forward
current
square wave [2] =1 μs- 9 A= 100 μs- 3 A =10ms - 1.7 A
Ptot total power dissipation Tamb≤25°C [3]- 375 mW junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 6. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
in free air [1][2]- - 330 K/W
Rth(j-sp) thermal resistance from
junction to solder point
[3]- - 70 K/W
NXP Semiconductors BAS21H
Single high-voltage switching diode Characteristics[1] Pulse test: tp≤ 300μs;δ≤ 0.02.
[2] When switched from IF=30 mA to IR=30 mA; RL= 100 Ω; measured at IR=3 mA.
Table 7. CharacteristicsTamb =25 °C unless otherwise specified. forward voltage IF= 100 mA [1] -- 1 V= 200 mA [1]- - 1.25 V reverse current VR= 200V - - 100 nA= 200 V; Tj= 150°C - - 100 μA diode capacitance VR =0V; f=1MHz - - 5 pF
trr reverse recovery time [2]- - 50 ns
NXP Semiconductors BAS21H
Single high-voltage switching diode
NXP Semiconductors BAS21H
Single high-voltage switching diode Test information Package outline
10. Packing information[1] For further information and the availability of packing methods, see Section15.
Table 8. Packing methodsThe indicated -xxx are the last three digits of the 12NC ordering code.[1]
BAS21H SOD123F 4 mm pitch, 8 mm tape and reel -115 -135
