BAS170W ,Schottky DiodesCharacteristics70 - - VBreakdown voltage V(BR)I = 10
BAS170W
Schottky Diodes
BAS170WSilicon Schottky Diode General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detection and mixing
Maximum Ratings
Thermal Resistance1For calculation of RthJA please refer to Application Note Thermal Resistance
BAS170W
Electrical Characteristics at TA = 25°C, unless otherwise specified
DC Characteristics
AC Characteristics
BAS170W
Diode capacitance CT = f = 1MHz0.0 VR4060V80
2.0 (IF)
EHB00045 Ι 10mA
Reverse current IR = (VR)
TA = Parameter-110101010-24060V80
Forward current IF = (TS)
10
20
30
40
50
60
70
80
100
BAS170W
Forward current IF = TA = 25 °C
0.0VF-110101010
0.51.0V1.5
Permissible Pulse LoadIFmax/ IFDC = (tp)
10 0 10 10
Fmax
FDC
Permissible Puls Load RthJS = (tp)
10 0 10 10 10 10
thJS
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